Frequency and Voltage Dependent Dielectric Properties of Ni-doped Ba0.6Sr0.4TiO3 Thin Films

Highly (100) preferred undoped and 1-5% Ni-doped Ba1-xSrxTiO3 (BST) thin films were deposited onto MgO (100) single crystal substrates at 750 C using pulsed laser deposition. BST thin film-based interdigital capacitors (IDC) were prepared by the standard photolithography process. The microwave prope...

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Bibliographic Details
Published in:Journal of electroceramics 2004-07, Vol.13 (1-3), p.239-243
Main Authors: Lim, M-H, Kim, H-S, Kim, N-Y, Kim, H-G, Kim, I-D, Moon, S E, Kwak, M-H, Ryu, H-C, Lee, S-J
Format: Article
Language:English
Subjects:
Dielectric properties
Thin films
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Summary:Highly (100) preferred undoped and 1-5% Ni-doped Ba1-xSrxTiO3 (BST) thin films were deposited onto MgO (100) single crystal substrates at 750 C using pulsed laser deposition. BST thin film-based interdigital capacitors (IDC) were prepared by the standard photolithography process. The microwave properties of BST films were measured at 10 GHz. Ni-doped BST films showed better dielectric properties by exhibiting improved dielectric Q while retaining an appropriate capacitance tuning compared to undoped BST films. 1% Ni-doped BST film showed the maximum figure of merit of 2896.1. It is suggested that 1 mol% Ni doped BST film is an effective candidate for high performance tunable device applications. 12 refs.
ISSN:1385-3449
1573-8663
DOI:10.1007/s10832-004-5105-z