Characterization of silicon photodiode-based trap detectors and establishment of spectral responsivity scale

Spectral responsivity scale was established at National Metrology Institute of Turkey (UME) between 350 and 850 nm wavelength ranges. The scale is based on UME made reflection type trap detector consisting of three single element silicon photodiodes. Various measurements systems were established in...

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Bibliographic Details
Published in:Optics and lasers in engineering 2005-02, Vol.43 (2), p.131-141
Main Authors: Bazkır, Özcan, Samadov, Farhad
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Optical characterization
Optical instruments, equipment and techniques
Optoelectronic devices
Photodiode
Photometers, radiometers and colorimeters
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Spectral responsivity
Trap detector
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Summary:Spectral responsivity scale was established at National Metrology Institute of Turkey (UME) between 350 and 850 nm wavelength ranges. The scale is based on UME made reflection type trap detector consisting of three single element silicon photodiodes. Various measurements systems were established in order to make optical characterization of trap detectors like linearity, polarization sensivity, uniformity and spectral responsivity. The absolute responsivity linked to the absolute optical power was obtained using improved laser stabilization optics and electrical substitution cryogenic radiometer system at discrete laser wavelengths. Using physical models for the trap detectors, reflectance and internal quantum efficiency the scale was realized with an expanded uncertainty of 0.05%.
ISSN:0143-8166
1873-0302
DOI:10.1016/j.optlaseng.2004.08.004