Loading…
Characterization of silicon photodiode-based trap detectors and establishment of spectral responsivity scale
Spectral responsivity scale was established at National Metrology Institute of Turkey (UME) between 350 and 850 nm wavelength ranges. The scale is based on UME made reflection type trap detector consisting of three single element silicon photodiodes. Various measurements systems were established in...
Saved in:
| Published in: | Optics and lasers in engineering 2005-02, Vol.43 (2), p.131-141 |
|---|---|
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | cdi_FETCH-LOGICAL-c440t-be926cf2c85e6e621a22dc836f14a3d821f4f834636d28743d0dd4a41e16373d3 |
|---|---|
| cites | cdi_FETCH-LOGICAL-c440t-be926cf2c85e6e621a22dc836f14a3d821f4f834636d28743d0dd4a41e16373d3 |
| container_end_page | 141 |
| container_issue | 2 |
| container_start_page | 131 |
| container_title | Optics and lasers in engineering |
| container_volume | 43 |
| creator | Bazkır, Özcan Samadov, Farhad |
| description | Spectral responsivity scale was established at National Metrology Institute of Turkey (UME) between 350 and 850
nm wavelength ranges. The scale is based on UME made reflection type trap detector consisting of three single element silicon photodiodes. Various measurements systems were established in order to make optical characterization of trap detectors like linearity, polarization sensivity, uniformity and spectral responsivity. The absolute responsivity linked to the absolute optical power was obtained using improved laser stabilization optics and electrical substitution cryogenic radiometer system at discrete laser wavelengths. Using physical models for the trap detectors, reflectance and internal quantum efficiency the scale was realized with an expanded uncertainty of 0.05%. |
| doi_str_mv | 10.1016/j.optlaseng.2004.08.004 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29140213</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0143816604001654</els_id><sourcerecordid>29140213</sourcerecordid><originalsourceid>FETCH-LOGICAL-c440t-be926cf2c85e6e621a22dc836f14a3d821f4f834636d28743d0dd4a41e16373d3</originalsourceid><addsrcrecordid>eNqFUMFOGzEQtaoiNYV-A3spt108tnGcI4poQULiAmfLsWcbR8566zFI9OvrNKgcOb2R5r158x5j58AH4KAvd0Oea3KE069BcK4GboYGn9gCzFL2XHLxmS04KNkb0PoL-0q0402pABYsrbeuOF-xxD-uxjx1eewopujbOG9zzSHmgP2mGYSuFjd3ASv6mgt1bgodUnWbFGm7x6n-E89tW1zqCtKcJ4ovsb525F3CM3YyukT47Q1P2dOPm8f1bX__8PNufX3fe6V47Te4EtqPwpsr1KgFOCGCN1KPoJwMRsCoRiOVljoIs1Qy8BCUU4Cg5VIGecoujnfnkn8_tw_tPpLHlNyE-ZmsWIHiAmQjLo9EXzJRwdHOJe5debXA7aFdu7P_27WHdi03tkFTfn-zcIdoY3GTj_Qu1xJA81XjXR952PK-RCyWfMTJY4il9WRDjh96_QWIg5c0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29140213</pqid></control><display><type>article</type><title>Characterization of silicon photodiode-based trap detectors and establishment of spectral responsivity scale</title><source>ScienceDirect Journals</source><creator>Bazkır, Özcan ; Samadov, Farhad</creator><creatorcontrib>Bazkır, Özcan ; Samadov, Farhad</creatorcontrib><description>Spectral responsivity scale was established at National Metrology Institute of Turkey (UME) between 350 and 850
nm wavelength ranges. The scale is based on UME made reflection type trap detector consisting of three single element silicon photodiodes. Various measurements systems were established in order to make optical characterization of trap detectors like linearity, polarization sensivity, uniformity and spectral responsivity. The absolute responsivity linked to the absolute optical power was obtained using improved laser stabilization optics and electrical substitution cryogenic radiometer system at discrete laser wavelengths. Using physical models for the trap detectors, reflectance and internal quantum efficiency the scale was realized with an expanded uncertainty of 0.05%.</description><identifier>ISSN: 0143-8166</identifier><identifier>EISSN: 1873-0302</identifier><identifier>DOI: 10.1016/j.optlaseng.2004.08.004</identifier><identifier>CODEN: OLENDN</identifier><language>eng</language><publisher>Oxford: Elsevier Ltd</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Optical characterization ; Optical instruments, equipment and techniques ; Optoelectronic devices ; Photodiode ; Photometers, radiometers and colorimeters ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Spectral responsivity ; Trap detector</subject><ispartof>Optics and lasers in engineering, 2005-02, Vol.43 (2), p.131-141</ispartof><rights>2004 Elsevier Ltd</rights><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c440t-be926cf2c85e6e621a22dc836f14a3d821f4f834636d28743d0dd4a41e16373d3</citedby><cites>FETCH-LOGICAL-c440t-be926cf2c85e6e621a22dc836f14a3d821f4f834636d28743d0dd4a41e16373d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16311609$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Bazkır, Özcan</creatorcontrib><creatorcontrib>Samadov, Farhad</creatorcontrib><title>Characterization of silicon photodiode-based trap detectors and establishment of spectral responsivity scale</title><title>Optics and lasers in engineering</title><description>Spectral responsivity scale was established at National Metrology Institute of Turkey (UME) between 350 and 850
nm wavelength ranges. The scale is based on UME made reflection type trap detector consisting of three single element silicon photodiodes. Various measurements systems were established in order to make optical characterization of trap detectors like linearity, polarization sensivity, uniformity and spectral responsivity. The absolute responsivity linked to the absolute optical power was obtained using improved laser stabilization optics and electrical substitution cryogenic radiometer system at discrete laser wavelengths. Using physical models for the trap detectors, reflectance and internal quantum efficiency the scale was realized with an expanded uncertainty of 0.05%.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Optical characterization</subject><subject>Optical instruments, equipment and techniques</subject><subject>Optoelectronic devices</subject><subject>Photodiode</subject><subject>Photometers, radiometers and colorimeters</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Spectral responsivity</subject><subject>Trap detector</subject><issn>0143-8166</issn><issn>1873-0302</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqFUMFOGzEQtaoiNYV-A3spt108tnGcI4poQULiAmfLsWcbR8566zFI9OvrNKgcOb2R5r158x5j58AH4KAvd0Oea3KE069BcK4GboYGn9gCzFL2XHLxmS04KNkb0PoL-0q0402pABYsrbeuOF-xxD-uxjx1eewopujbOG9zzSHmgP2mGYSuFjd3ASv6mgt1bgodUnWbFGm7x6n-E89tW1zqCtKcJ4ovsb525F3CM3YyukT47Q1P2dOPm8f1bX__8PNufX3fe6V47Te4EtqPwpsr1KgFOCGCN1KPoJwMRsCoRiOVljoIs1Qy8BCUU4Cg5VIGecoujnfnkn8_tw_tPpLHlNyE-ZmsWIHiAmQjLo9EXzJRwdHOJe5debXA7aFdu7P_27WHdi03tkFTfn-zcIdoY3GTj_Qu1xJA81XjXR952PK-RCyWfMTJY4il9WRDjh96_QWIg5c0</recordid><startdate>20050201</startdate><enddate>20050201</enddate><creator>Bazkır, Özcan</creator><creator>Samadov, Farhad</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20050201</creationdate><title>Characterization of silicon photodiode-based trap detectors and establishment of spectral responsivity scale</title><author>Bazkır, Özcan ; Samadov, Farhad</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c440t-be926cf2c85e6e621a22dc836f14a3d821f4f834636d28743d0dd4a41e16373d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</topic><topic>Optical characterization</topic><topic>Optical instruments, equipment and techniques</topic><topic>Optoelectronic devices</topic><topic>Photodiode</topic><topic>Photometers, radiometers and colorimeters</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Spectral responsivity</topic><topic>Trap detector</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bazkır, Özcan</creatorcontrib><creatorcontrib>Samadov, Farhad</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Optics and lasers in engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bazkır, Özcan</au><au>Samadov, Farhad</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of silicon photodiode-based trap detectors and establishment of spectral responsivity scale</atitle><jtitle>Optics and lasers in engineering</jtitle><date>2005-02-01</date><risdate>2005</risdate><volume>43</volume><issue>2</issue><spage>131</spage><epage>141</epage><pages>131-141</pages><issn>0143-8166</issn><eissn>1873-0302</eissn><coden>OLENDN</coden><abstract>Spectral responsivity scale was established at National Metrology Institute of Turkey (UME) between 350 and 850
nm wavelength ranges. The scale is based on UME made reflection type trap detector consisting of three single element silicon photodiodes. Various measurements systems were established in order to make optical characterization of trap detectors like linearity, polarization sensivity, uniformity and spectral responsivity. The absolute responsivity linked to the absolute optical power was obtained using improved laser stabilization optics and electrical substitution cryogenic radiometer system at discrete laser wavelengths. Using physical models for the trap detectors, reflectance and internal quantum efficiency the scale was realized with an expanded uncertainty of 0.05%.</abstract><cop>Oxford</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.optlaseng.2004.08.004</doi><tpages>11</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0143-8166 |
| ispartof | Optics and lasers in engineering, 2005-02, Vol.43 (2), p.131-141 |
| issn | 0143-8166 1873-0302 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_29140213 |
| source | ScienceDirect Journals |
| subjects | Applied sciences Electronics Exact sciences and technology Instruments, apparatus, components and techniques common to several branches of physics and astronomy Optical characterization Optical instruments, equipment and techniques Optoelectronic devices Photodiode Photometers, radiometers and colorimeters Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Spectral responsivity Trap detector |
| title | Characterization of silicon photodiode-based trap detectors and establishment of spectral responsivity scale |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T23%3A19%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Characterization%20of%20silicon%20photodiode-based%20trap%20detectors%20and%20establishment%20of%20spectral%20responsivity%20scale&rft.jtitle=Optics%20and%20lasers%20in%20engineering&rft.au=Bazk%C4%B1r,%20%C3%96zcan&rft.date=2005-02-01&rft.volume=43&rft.issue=2&rft.spage=131&rft.epage=141&rft.pages=131-141&rft.issn=0143-8166&rft.eissn=1873-0302&rft.coden=OLENDN&rft_id=info:doi/10.1016/j.optlaseng.2004.08.004&rft_dat=%3Cproquest_cross%3E29140213%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c440t-be926cf2c85e6e621a22dc836f14a3d821f4f834636d28743d0dd4a41e16373d3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=29140213&rft_id=info:pmid/&rfr_iscdi=true |