High voltage thin film transistors integrated with MEMS

The integration of high voltage thin film transistors with a released MEMS process onto the same substrate is demonstrated. High voltage transistors capable of 800 V actuation voltage are used to actuate released metal cantilevers and membranes with a low temperature fabrication process (

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Bibliographic Details
Published in:Sensors and actuators. A. Physical. 2006-08, Vol.130, p.297-301
Main Authors: Chow, Eugene M., Lu, Jeng Ping, Ho, Jackson, Shih, Chinwen, De Bruyker, Dirk, Rosa, Michel, Peeters, Eric
Format: Article
Language:English
Subjects:
Electrostatic actuation
High voltage
Integrated drivers
Thin film transistor (TFT)
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Description
Summary:The integration of high voltage thin film transistors with a released MEMS process onto the same substrate is demonstrated. High voltage transistors capable of 800 V actuation voltage are used to actuate released metal cantilevers and membranes with a low temperature fabrication process (
ISSN:0924-4247
1873-3069
DOI:10.1016/j.sna.2005.10.028