Effects of electric field and light on resistivity switching of Eu0.7Sr0.3MnO3 thin films

• Published in: Physical chemistry chemical physics : PCCP 2024-02, Vol.26 (6), p.4968-4974
• Main Authors: Zheng, Ming, Zhang, Yixiao, Wang, Shengnan, Yang, Jian, Guan, Pengfei, Zhang, Baojing, Fan, Heliang, Yan, Shiguang, Ni, Hao, Chang, Yang
• Format: Article
• Language: English
• Subjects: Carrier density; Coupling; Current carriers; Electric fields; Electrical resistivity; Heterostructures; Lattice strain; Manganites; Physical properties; Piezoelectricity; Room temperature; Single crystals; Switching; Thin films
• ISSN: 1463-9076; 1463-9084
• DOI: 10.1039/d3cp05256g

Based on the excellent piezoelectric properties of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT) single crystals, a hole-doped manganite film/PMN–PT heterostructure has been constructed to achieve electric-field and light co-control of physical properties. Here, we report the resistivity switching behavior of Eu0.7Sr0.3MnO3/PMN–PT(111) multiferroic heterostructures under different in-plane reading currents, temperatures, light stimuli and electric fields, and discuss the underlying coupling mechanisms of resistivity change. The transition from the electric-field induced lattice strain effect to polarization current effect can be controlled effectively by decreasing the in-plane reading current at room temperature. With the decrease of temperature, the interfacial charge effect dominates over the lattice strain effect due to the reduced charge carrier density. In addition, light stimulus can lead to the delocalization of eg carriers, and thus enhance the lattice strain effect and suppress the interfacial charge effect. This work helps to understand essential physics of magnetoelectric coupling and also provides a potential method to realize energy-efficient multi-field control of manganite thin films.