Crack free monolithic nitride vertical-cavity surface-emitting laser structures and pillar microcavities

We report on the successful fabrication and optical investigation of monolithicly grown GaN based vertical‐cavity surface‐emitting laser structures featuring quality factors of 250. Short‐period AlN/InGaN superlattices are used for the low‐index layers of the distributed Bragg reflectors. Pillar mic...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2006-05, Vol.203 (7), p.1749-1753
Main Authors: Lohmeyer, Henning, Sebald, Kathrin, Kruse, Carsten, Kröger, Roland, Gutowski, Jürgen, Hommel, Detlef, Wiersig, Jan, Jahnke, Frank
Format: Article
Language:English
Subjects:
42.55.Px
42.55.Sa
78.55.Cr
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Microcavity and microdisk lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:We report on the successful fabrication and optical investigation of monolithicly grown GaN based vertical‐cavity surface‐emitting laser structures featuring quality factors of 250. Short‐period AlN/InGaN superlattices are used for the low‐index layers of the distributed Bragg reflectors. Pillar microcavities are realized by focused‐ion‐beam etching. Micro‐photoluminescence measurements reveal the longitudinal and transversal mode spectra of the cavities in good agreement with theoretical calculations based on a vectorial transfer matrix method. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6300
0031-8965
1862-6319
DOI:10.1002/pssa.200565426