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Water‐Resistance‐Based S‐Scheme Heterojunction for Deep Mineralization of Toluene

Deep mineralization of low concentration toluene (C7H8) is one of the most significant but challenging reactions in photocatalysis. It is generally assumed that hydroxyl radicals (⋅OH) as the main reactive species contribute to the enhanced photoactivity, however, it remains ambiguous at this stage....

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Published in:Angewandte Chemie International Edition 2024-03, Vol.63 (11), p.e202319432-n/a
Main Authors: Li, Yuhan, Chen, Bangfu, Liu, Li, Zhu, Bicheng, Zhang, Dieqing
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Language:English
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description Deep mineralization of low concentration toluene (C7H8) is one of the most significant but challenging reactions in photocatalysis. It is generally assumed that hydroxyl radicals (⋅OH) as the main reactive species contribute to the enhanced photoactivity, however, it remains ambiguous at this stage. Herein, a S‐scheme ZnSn(OH)6‐based heterojunction with AlOOH as water resistant surface layer is in situ designed for tuning the free radical species and achieving deep mineralization of C7H8. By employing a combination of in situ DRIFTS and materials characterization techniques, we discover that the dominant intermediates such as benzaldehyde and benzoic acid instead of toxic phenols are formed under the action of holes (h+) and superoxide radicals (⋅O2−). These dominant intermediates turn out to greatly decrease the ring‐opening reaction barrier. This study offers new possibilities for rationally tailoring the active species and thus directionally producing dominant intermediates via designing water resistant surface layer. A novel water resistant S‐scheme ZnSn(OH)6‐based heterojunction is in situ designed. The unique H2O‐resistant AlOOH surface layer is conducive to steering the active species to form the dominant intermediates including benzoic acid and benzaldehyde instead of toxic phenols. These intermediates greatly decrease the ring‐opening reaction barrier thus resulting an excellent toluene removal efficiency and a high mineralization rate.
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source Wiley-Blackwell Read & Publish Collection
subjects Benzaldehyde
Benzoic acid
Deep Mineralization
Free radicals
Heterojunctions
Hydroxyl radicals
Intermediates
Mineralization
Phenols
S-Scheme Heterojunction
Surface layers
Toluene
Water Resistance
ZnSn(OH)6
title Water‐Resistance‐Based S‐Scheme Heterojunction for Deep Mineralization of Toluene
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