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Water‐Resistance‐Based S‐Scheme Heterojunction for Deep Mineralization of Toluene
Deep mineralization of low concentration toluene (C7H8) is one of the most significant but challenging reactions in photocatalysis. It is generally assumed that hydroxyl radicals (⋅OH) as the main reactive species contribute to the enhanced photoactivity, however, it remains ambiguous at this stage....
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Published in: | Angewandte Chemie International Edition 2024-03, Vol.63 (11), p.e202319432-n/a |
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description | Deep mineralization of low concentration toluene (C7H8) is one of the most significant but challenging reactions in photocatalysis. It is generally assumed that hydroxyl radicals (⋅OH) as the main reactive species contribute to the enhanced photoactivity, however, it remains ambiguous at this stage. Herein, a S‐scheme ZnSn(OH)6‐based heterojunction with AlOOH as water resistant surface layer is in situ designed for tuning the free radical species and achieving deep mineralization of C7H8. By employing a combination of in situ DRIFTS and materials characterization techniques, we discover that the dominant intermediates such as benzaldehyde and benzoic acid instead of toxic phenols are formed under the action of holes (h+) and superoxide radicals (⋅O2−). These dominant intermediates turn out to greatly decrease the ring‐opening reaction barrier. This study offers new possibilities for rationally tailoring the active species and thus directionally producing dominant intermediates via designing water resistant surface layer.
A novel water resistant S‐scheme ZnSn(OH)6‐based heterojunction is in situ designed. The unique H2O‐resistant AlOOH surface layer is conducive to steering the active species to form the dominant intermediates including benzoic acid and benzaldehyde instead of toxic phenols. These intermediates greatly decrease the ring‐opening reaction barrier thus resulting an excellent toluene removal efficiency and a high mineralization rate. |
doi_str_mv | 10.1002/anie.202319432 |
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A novel water resistant S‐scheme ZnSn(OH)6‐based heterojunction is in situ designed. The unique H2O‐resistant AlOOH surface layer is conducive to steering the active species to form the dominant intermediates including benzoic acid and benzaldehyde instead of toxic phenols. These intermediates greatly decrease the ring‐opening reaction barrier thus resulting an excellent toluene removal efficiency and a high mineralization rate.</description><edition>International ed. in English</edition><identifier>ISSN: 1433-7851</identifier><identifier>EISSN: 1521-3773</identifier><identifier>DOI: 10.1002/anie.202319432</identifier><identifier>PMID: 38233346</identifier><language>eng</language><publisher>Germany: Wiley Subscription Services, Inc</publisher><subject>Benzaldehyde ; Benzoic acid ; Deep Mineralization ; Free radicals ; Heterojunctions ; Hydroxyl radicals ; Intermediates ; Mineralization ; Phenols ; S-Scheme Heterojunction ; Surface layers ; Toluene ; Water Resistance ; ZnSn(OH)6</subject><ispartof>Angewandte Chemie International Edition, 2024-03, Vol.63 (11), p.e202319432-n/a</ispartof><rights>2024 Wiley‐VCH GmbH</rights><rights>2024 Wiley-VCH GmbH.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3732-112646166bea7139c7fb1a095b8bba81749ef03e98dbabf92c0508514460bc593</citedby><cites>FETCH-LOGICAL-c3732-112646166bea7139c7fb1a095b8bba81749ef03e98dbabf92c0508514460bc593</cites><orcidid>0000-0001-7546-3630 ; 0000-0003-4043-771X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/38233346$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Li, Yuhan</creatorcontrib><creatorcontrib>Chen, Bangfu</creatorcontrib><creatorcontrib>Liu, Li</creatorcontrib><creatorcontrib>Zhu, Bicheng</creatorcontrib><creatorcontrib>Zhang, Dieqing</creatorcontrib><title>Water‐Resistance‐Based S‐Scheme Heterojunction for Deep Mineralization of Toluene</title><title>Angewandte Chemie International Edition</title><addtitle>Angew Chem Int Ed Engl</addtitle><description>Deep mineralization of low concentration toluene (C7H8) is one of the most significant but challenging reactions in photocatalysis. It is generally assumed that hydroxyl radicals (⋅OH) as the main reactive species contribute to the enhanced photoactivity, however, it remains ambiguous at this stage. Herein, a S‐scheme ZnSn(OH)6‐based heterojunction with AlOOH as water resistant surface layer is in situ designed for tuning the free radical species and achieving deep mineralization of C7H8. By employing a combination of in situ DRIFTS and materials characterization techniques, we discover that the dominant intermediates such as benzaldehyde and benzoic acid instead of toxic phenols are formed under the action of holes (h+) and superoxide radicals (⋅O2−). These dominant intermediates turn out to greatly decrease the ring‐opening reaction barrier. This study offers new possibilities for rationally tailoring the active species and thus directionally producing dominant intermediates via designing water resistant surface layer.
A novel water resistant S‐scheme ZnSn(OH)6‐based heterojunction is in situ designed. The unique H2O‐resistant AlOOH surface layer is conducive to steering the active species to form the dominant intermediates including benzoic acid and benzaldehyde instead of toxic phenols. These intermediates greatly decrease the ring‐opening reaction barrier thus resulting an excellent toluene removal efficiency and a high mineralization rate.</description><subject>Benzaldehyde</subject><subject>Benzoic acid</subject><subject>Deep Mineralization</subject><subject>Free radicals</subject><subject>Heterojunctions</subject><subject>Hydroxyl radicals</subject><subject>Intermediates</subject><subject>Mineralization</subject><subject>Phenols</subject><subject>S-Scheme Heterojunction</subject><subject>Surface layers</subject><subject>Toluene</subject><subject>Water Resistance</subject><subject>ZnSn(OH)6</subject><issn>1433-7851</issn><issn>1521-3773</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNqF0LtOwzAUBmALgaBcVkYUiYUlxfZxnHgspVwkLhIXMUa2eyJSpXGxGyGYeASekSfBUC4SC5OPrc-_7J-QbUb7jFK-r9sa-5xyYEoAXyI9lnGWQp7DcpwFQJoXGVsj6yFMoi8KKlfJGhQcAITskbs7PUf_9vJ6haEOc91ajJsDHXCcXMfp2t7jFJMTjMpNutbOa9cmlfPJIeIsOa9b9Lqpn_XnuauSG9d02OImWal0E3Dra90gt0ejm-FJenZ5fDocnKUWcuApY1wKyaQ0qHMGyuaVYZqqzBTG6ILlQmFFAVUxNtpUilua0fghISQ1NlOwQfYWuTPvHjoM83JaB4tNo1t0XSi5YlJQyamMdPcPnbjOt_F1UYGgUDCeR9VfKOtdCB6rcubrqfZPJaPlR-XlR-XlT-Xxws5XbGemOP7h3x1HoBbgsW7w6Z-4cnBxOvoNfwf7kY8P</recordid><startdate>20240311</startdate><enddate>20240311</enddate><creator>Li, Yuhan</creator><creator>Chen, Bangfu</creator><creator>Liu, Li</creator><creator>Zhu, Bicheng</creator><creator>Zhang, Dieqing</creator><general>Wiley Subscription Services, Inc</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7TM</scope><scope>K9.</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0001-7546-3630</orcidid><orcidid>https://orcid.org/0000-0003-4043-771X</orcidid></search><sort><creationdate>20240311</creationdate><title>Water‐Resistance‐Based S‐Scheme Heterojunction for Deep Mineralization of Toluene</title><author>Li, Yuhan ; Chen, Bangfu ; Liu, Li ; Zhu, Bicheng ; Zhang, Dieqing</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3732-112646166bea7139c7fb1a095b8bba81749ef03e98dbabf92c0508514460bc593</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Benzaldehyde</topic><topic>Benzoic acid</topic><topic>Deep Mineralization</topic><topic>Free radicals</topic><topic>Heterojunctions</topic><topic>Hydroxyl radicals</topic><topic>Intermediates</topic><topic>Mineralization</topic><topic>Phenols</topic><topic>S-Scheme Heterojunction</topic><topic>Surface layers</topic><topic>Toluene</topic><topic>Water Resistance</topic><topic>ZnSn(OH)6</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Yuhan</creatorcontrib><creatorcontrib>Chen, Bangfu</creatorcontrib><creatorcontrib>Liu, Li</creatorcontrib><creatorcontrib>Zhu, Bicheng</creatorcontrib><creatorcontrib>Zhang, Dieqing</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Nucleic Acids Abstracts</collection><collection>ProQuest Health & Medical Complete (Alumni)</collection><collection>MEDLINE - Academic</collection><jtitle>Angewandte Chemie International Edition</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Yuhan</au><au>Chen, Bangfu</au><au>Liu, Li</au><au>Zhu, Bicheng</au><au>Zhang, Dieqing</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Water‐Resistance‐Based S‐Scheme Heterojunction for Deep Mineralization of Toluene</atitle><jtitle>Angewandte Chemie International Edition</jtitle><addtitle>Angew Chem Int Ed Engl</addtitle><date>2024-03-11</date><risdate>2024</risdate><volume>63</volume><issue>11</issue><spage>e202319432</spage><epage>n/a</epage><pages>e202319432-n/a</pages><issn>1433-7851</issn><eissn>1521-3773</eissn><abstract>Deep mineralization of low concentration toluene (C7H8) is one of the most significant but challenging reactions in photocatalysis. It is generally assumed that hydroxyl radicals (⋅OH) as the main reactive species contribute to the enhanced photoactivity, however, it remains ambiguous at this stage. Herein, a S‐scheme ZnSn(OH)6‐based heterojunction with AlOOH as water resistant surface layer is in situ designed for tuning the free radical species and achieving deep mineralization of C7H8. By employing a combination of in situ DRIFTS and materials characterization techniques, we discover that the dominant intermediates such as benzaldehyde and benzoic acid instead of toxic phenols are formed under the action of holes (h+) and superoxide radicals (⋅O2−). These dominant intermediates turn out to greatly decrease the ring‐opening reaction barrier. This study offers new possibilities for rationally tailoring the active species and thus directionally producing dominant intermediates via designing water resistant surface layer.
A novel water resistant S‐scheme ZnSn(OH)6‐based heterojunction is in situ designed. The unique H2O‐resistant AlOOH surface layer is conducive to steering the active species to form the dominant intermediates including benzoic acid and benzaldehyde instead of toxic phenols. These intermediates greatly decrease the ring‐opening reaction barrier thus resulting an excellent toluene removal efficiency and a high mineralization rate.</abstract><cop>Germany</cop><pub>Wiley Subscription Services, Inc</pub><pmid>38233346</pmid><doi>10.1002/anie.202319432</doi><tpages>11</tpages><edition>International ed. in English</edition><orcidid>https://orcid.org/0000-0001-7546-3630</orcidid><orcidid>https://orcid.org/0000-0003-4043-771X</orcidid></addata></record> |
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subjects | Benzaldehyde Benzoic acid Deep Mineralization Free radicals Heterojunctions Hydroxyl radicals Intermediates Mineralization Phenols S-Scheme Heterojunction Surface layers Toluene Water Resistance ZnSn(OH)6 |
title | Water‐Resistance‐Based S‐Scheme Heterojunction for Deep Mineralization of Toluene |
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