Influence of arsenic pressure on photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

• Published in: Journal of crystal growth 2005-08, Vol.281 (2), p.249-254
• Main Authors: Pavelescu, E.-M., Hakkarainen, T., Dhaka, V.D.S., Tkachenko, N.V., Jouhti, T., Lemmetyinen, H., Pessa, M.
• Format: Article
• Language: English
• Subjects: A1. Photoluminescence; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Dilute nitride alloys; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of crystal growth; physics of crystal growth; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Physics; Transport properties of condensed matter (nonelectronic)
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2005.04.025

We have investigated the photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures with all the other fluxes kept constant. The best optical properties are achieved when the V/III beam equivalent pressure ratio (V/III BEP) is equal to 10. The emission wavelength remains unchanged for the V/III BEP ratios between 8 and 12, suggesting that within this range neither the alloy composition nor the nitrogen sticking coefficient is changed. For V/III BEP12 incorporation is reduced. Post-growth thermal annealing induces a spectral blue-shift, which decreases as the V/III BEP ratio is increased above 12. This phenomenon is likely due to combined effects of Ga/In interdiffusion and a change in the nearest neighbourhood of nitrogen.