A double-layer current conduction model for high- κ gate dielectric materials with interfacial oxide or silicate layer

The current–voltage ( I– V) characteristics of metal-oxide-semiconductor (MOS) structures with hafnium oxide as the gate dielectric film were studied. Sharp shifts from a low-voltage ohmic regime to a tunneling conduction were observed in the high-voltage range. The paper demonstrates that this beha...

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Bibliographic Details
Published in:Microelectronic engineering 2006-10, Vol.83 (10), p.1950-1956
Main Authors: Filip, V., Wong, H., Sen, B., Nicolaescu, D., Sarkar, C.K.
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Current conduction
Electronics
Exact sciences and technology
Hafnium oxide
MOS structure
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The current–voltage ( I– V) characteristics of metal-oxide-semiconductor (MOS) structures with hafnium oxide as the gate dielectric film were studied. Sharp shifts from a low-voltage ohmic regime to a tunneling conduction were observed in the high-voltage range. The paper demonstrates that this behavior can be described very well with a double-layer dielectric model. Excellent fittings of the experimental curves were obtained and the related key structural and physical parameters were obtained. The model fitting further suggests the optimal annealing conditions for preparing the hafnium oxide films.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2006.01.137