Deep muonium state in InSb: Recombination center vs. trapping center

The bound state of an isotropic muonium atom has been detected in both n- and p-type InSb using a high-field μ SR technique. The hyperfine constant obtained for this center ( A = 2464 ± 1 MHz ) is characteristic of deep-level Mu 0 centers at tetrahedral interstitial sites in other cubic semiconducto...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2006-03, Vol.374, p.387-389
Main Authors: Storchak, V.G., Eshchenko, D.G., Brewer, J.H., Aronzon, B.A., Cottrell, S.P., Lichti, R.L., Savici, A.T., J Uemura, Y.
Format: Article
Language:English
Subjects:
Electron ionization
Energy level
Muonium
Narrow-band semiconductor
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Summary:The bound state of an isotropic muonium atom has been detected in both n- and p-type InSb using a high-field μ SR technique. The hyperfine constant obtained for this center ( A = 2464 ± 1 MHz ) is characteristic of deep-level Mu 0 centers at tetrahedral interstitial sites in other cubic semiconductors, which typically ionize above 300 K . In contrast, the Mu 0 center in InSb disappears above about 30 K , which is more characteristic of ionization of a shallow-level impurity. The charge-state dynamics of Mu in InSb is discussed in terms of a deep trap or recombination center, rather than as electron ionization.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2005.11.108