Shape transition from InAs quantum dash to quantum dot on InP(3 1 1)A

We report on the shape transition from InAs quantum dashes to quantum dots (QDs) on lattice-matched GaInAsP on InP(3 1 1)A substrates. InAs quantum dashes develop during chemical-beam epitaxy of 3.2 monolayers InAs, which transform into round InAs QDs by introducing a growth interruption without ars...

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Bibliographic Details
Published in:Journal of crystal growth 2005-07, Vol.280 (3), p.413-418
Main Authors: Gong, Q., Nötzel, R., van Veldhoven, P.J., Eijkemans, T.J., Wolter, J.H.
Format: Article
Language:English
Subjects:
A1. Low dimensional structures
A3. Chemical beam epitaxy
B2. Semiconducting III–V materials
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Transport properties of condensed matter (nonelectronic)
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Summary:We report on the shape transition from InAs quantum dashes to quantum dots (QDs) on lattice-matched GaInAsP on InP(3 1 1)A substrates. InAs quantum dashes develop during chemical-beam epitaxy of 3.2 monolayers InAs, which transform into round InAs QDs by introducing a growth interruption without arsenic flux after InAs deposition. The shape transition is solely attributed to surface properties, i.e., increase of the surface energy and symmetry under arsenic deficient conditions. The round QD shape is maintained during subsequent GaInAsP overgrowth because the reversed shape transition from dot to dash is kinetically hindered by the decreased ad-atom diffusion under arsenic flux.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2004.11.434