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Acoustoelectric Effects in Ge/Si Nanosystems with Ge Quantum Dots

Dense (n = 3 X 1011 cm-2) arrays of Ge quantum dots (QDs) in Si host were studied using surface acoustic wave (SAW) propagating along the surface of a piezoelectric crystal located near the sample. The SAW magneto-attenuation coefficient, = (, H) - (, 0), and change of the SAW velocity, V/V = [V(H)...

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Bibliographic Details
Main Authors: Drichko, I L, Diakonov, A M, Smirnov, I Yu, Galperin, Y M, Yakimov, A I, Nikiforov, A I
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:Dense (n = 3 X 1011 cm-2) arrays of Ge quantum dots (QDs) in Si host were studied using surface acoustic wave (SAW) propagating along the surface of a piezoelectric crystal located near the sample. The SAW magneto-attenuation coefficient, = (, H) - (, 0), and change of the SAW velocity, V/V = [V(H) - V(0)]/V(0), were measured in the temperature interval T = 2-4.2 K as functions of magnetic field H up to 6 T for the waves in the frequency range f = 30 - 300 MHz. Basing on the dependences of on H, T and , as well as on its sign, we believe that the AC conduction mechanism is hopping between the states localized in different QDs. The measured magnetic field dependence of the SAW attenuation is discussed basing on existing theoretical concepts.
ISSN:0094-243X
DOI:10.1063/1.1994548