Deposition of highly photoconductive wide band gap a-SiOx: H thin films at a high temperature without H2-dilution

Electrical and optical characterisation of hydrogenated amorphous silicon-oxygen alloy thin films (a-SiOx:H, x < 2) grown in a single chamber radio frequency plasma enhanced chemical vapour deposition (PECVD) system at a high substrate temperature of 300 deg C is presented. The samples were inves...

Full description

Saved in:
Bibliographic Details
Published in:Solar energy materials and solar cells 2005-10, Vol.89 (1), p.49-59
Main Authors: BACIOGLU, A, KODOLBAS, A. O, ÖKTÜ, Ö
Format: Article
Language:English
Subjects:
Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Electrical and optical characterisation of hydrogenated amorphous silicon-oxygen alloy thin films (a-SiOx:H, x < 2) grown in a single chamber radio frequency plasma enhanced chemical vapour deposition (PECVD) system at a high substrate temperature of 300 deg C is presented. The samples were investigated by Fourier transform infrared spectroscopy (FTIR), optical transmission, the constant photocurrent method (CPM), conductivity and steady-state photoconductivity measurements. With increasing oxygen concentration, the Tauc gap increases from 1.69 to 2.73eV. The sample with an oxygen concentration of 26.2at% and a reasonably high bandgap of 2.18eV shows photoconductivity comparable to that of pure a-Si:H films. The Urbach parameter (E0) increases almost linearly with oxygen concentration whereas the dangling bond defect density is found to be saturating at a value of about 7.1X1016cm-3. One of the highly alloyed samples with exhibited a detectable photosensitivity.
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2005.01.001