Direct synthesis of SiC nanowires by multiple reaction VS growth

β-SiC nanowires were directly synthesized by heating single-crystal silicon wafer and graphite without metal catalysts. The diameter of SiC nanowires is in the range of 10–30 nm, and the length is up to a few millimeters. Two kinds of SiC nanowires, namely pure SiC nanowires and SiC/SiO 2 composite...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2007-01, Vol.136 (1), p.72-77
Main Authors: Du, X.W., Zhao, X., Jia, S.L., Lu, Y.W., Li, J.J., Zhao, N.Q.
Format: Article
Language:English
Subjects:
Nanowires
SiC
Synthesis
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Summary:β-SiC nanowires were directly synthesized by heating single-crystal silicon wafer and graphite without metal catalysts. The diameter of SiC nanowires is in the range of 10–30 nm, and the length is up to a few millimeters. Two kinds of SiC nanowires, namely pure SiC nanowires and SiC/SiO 2 composite nanowires, formed at higher temperature (the holding stage) and lower temperature (the cooling stage), respectively. A multiple-reaction model was proposed to explain the formation of SiC nanowires.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2006.09.005