Synthesis and Practicability of Novel Additives for Copper Electroplating with Semiconductor Packaging

• Published in: Journal of applied polymer science 2005-05, Vol.96 (3), p.837-840
• Main Authors: Sugimoto, Masaharu, Yamaguchi, Kazuki, Kouzai, Hiroaki, Honma, Hideo
• Format: Article
• Language: English
• ISSN: 0021-8995; 1097-4682
• DOI: 10.1002/app.24490

Connection reliability between Large Scale Integrated circuit (LSI) and electronic devices is increasingly important with the miniaturization of electronic devices. For the formation of fine conductors on wiring in electronic devices, copper electroplating is generally applied and is controlled with various organic additives. In this study, for the purpose of developing additives capable of working on a finer conductive copper circuit, we focused our attention on the synthesis of organic additives with inhibition action for the plating. Generally, poly(ethylene glycol) (PEG) was used as an inhibitor. We synthesized the PEG derivatives, which were alpha-(2-chloroethyl)-w-chloropoly(oxyethylene) (PEG-C1) and alpha-(2-sulfoethyl)-w-sulfopoly(oxyethylene)disodium, and evaluated them for their Via-filling properties. Good filling properties were achieved by the addition of these synthesized materials to a normal copper-plating bath. Furthermore, with PEG-C1, good filling properties were achieved without chlorine ions, which were usually added to the bath.