Simulation of heat transfer and melt flow in Czochralski growth of Si1−xGex crystals

Using numerical simulation, we have studied the Si1-xGex Czochralski (CZ) growth with 3 at% initial melt Ge content. Global heat transfer computations in the entire CZ system and 2D or 3D computations of melt turbulent convection in the crystallization zone have been made. The computed crystallizati...

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Bibliographic Details
Published in:Journal of crystal growth 2004-05, Vol.266 (1-3), p.74-80
Main Authors: Smirnova, O.V., Kalaev, V.V., Makarov, Yu.N., Abrosimov, N.V., Riemann, H.
Format: Article
Language:English
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Summary:Using numerical simulation, we have studied the Si1-xGex Czochralski (CZ) growth with 3 at% initial melt Ge content. Global heat transfer computations in the entire CZ system and 2D or 3D computations of melt turbulent convection in the crystallization zone have been made. The computed crystallization front shape is compared with respective experimental data obtained by X-ray topography. Unsteady transitions of the melt flow are studied to analyze the stability of the crystallization process.
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2004.02.032