Deposition of CeO2 Films on Si(100) Substrates by Electron Beam Evaporation

Thin films of cerium dioxide were deposited on silicon (100) substrates using e‐beam evaporation. The influence of different technological parameters, such as the substrate temperature, the oxygen pressure and the beam power on the crystallographic orientation of the films was explored. By optimizin...

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Bibliographic Details
Published in:Plasma processes and polymers 2006-02, Vol.3 (2), p.197-200
Main Authors: Djanovski, Georgi, Beshkova, Milena, Velinova, Sonia, Mollov, Dimitar, Vlaev, Petko, Kovacheva, Daniela, Vutova, Katia, Mladenov, Georgi
Format: Article
Language:English
Subjects:
CeO2
Cross-disciplinary physics: materials science
rheology
e-beam evaporation (EBE)
epitaxy
Exact sciences and technology
Ion and electron beam-assisted deposition
ion plating
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
nanostructures
Physics
scanning electron microscopy (SEM)
XRD
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Summary:Thin films of cerium dioxide were deposited on silicon (100) substrates using e‐beam evaporation. The influence of different technological parameters, such as the substrate temperature, the oxygen pressure and the beam power on the crystallographic orientation of the films was explored. By optimizing these parameters, CeO2 thin films with a strongly preferred (200) orientation could be deposited on Si(100) substrates. XRD patterns of the CeO2 thin films deposited at various temperatures.
ISSN:1612-8850
1612-8869
DOI:10.1002/ppap.200500095