Transistor scaling with novel materials

Complementary metal-oxide-semiconductor (CMOS) transistor scaling will continue for at least another decade. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. Here we discuss the challenges and opportunities of transistor sc...

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Bibliographic Details
Published in:Materials today (Kidlington, England) England), 2006-06, Vol.9 (6), p.26-31
Main Authors: Ieong, Meikei, Narayanan, Vijay, Singh, Dinkar, Topol, Anna, Chan, Victor, Ren, Zhibin
Format: Article
Language:English
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Summary:Complementary metal-oxide-semiconductor (CMOS) transistor scaling will continue for at least another decade. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. Here we discuss the challenges and opportunities of transistor scaling for the next five to ten years.
ISSN:1369-7021
1873-4103
DOI:10.1016/S1369-7021(06)71540-1