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Development of large-area a-Si:H films deposition using controlled VHF plasma

A VHF plasma for a large-area a-Si:H films deposition has been produced using the ladder-shaped electrode and the phase modulation method. These techniques enable to average the voltage distribution along the electrode by a high-speed scanning of the voltage standing wave. The effects of these techn...

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Bibliographic Details
Published in:Thin solid films 2006-05, Vol.506 (Complete), p.22-26
Main Authors: Kawamura, K., Mashima, H., Takeuchi, Y., Takano, A., Noda, M., Yonekura, Y., Takatsuka, H.
Format: Article
Language:English
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Summary:A VHF plasma for a large-area a-Si:H films deposition has been produced using the ladder-shaped electrode and the phase modulation method. These techniques enable to average the voltage distribution along the electrode by a high-speed scanning of the voltage standing wave. The effects of these techniques are demonstrated on the a-Si:H films deposition using 1.4 m × 1.1 m substrates and on the self-cleaning using NF 3 plasmas. The spatial irregularity of the deposition rate is about ± 15% and the self-cleaning rate is 5 nm/s.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2005.08.017