The Remarkable Role of Indium in Synergistically Optimizing Carrier Concentration and Phase Distribution of AgCuTe‐Based Materials

• Published in: Small (Weinheim an der Bergstrasse, Germany) Germany), 2024-07, Vol.20 (28), p.e2311340-n/a
• Main Authors: Li, Jingfeng, Lyu, Jingyi, Yang, Wenwei, Ren, Zijie, Chen, Zhixing, Zhao, Zhanpeng, Jiang, Jiahao, Yang, Hailong, Shuai, Jing
• Format: Article
• Language: English
• Subjects: AgCuTe‐based materials; Carrier density; carrier regulation; Doping; Figure of merit; Hexagonal phase; Indium; indium doping; Low temperature; Phase composition; Phase distribution; phase redistribution; Phase transitions; Power factor; Room temperature; Seebeck effect; Thermal conductivity; Thermoelectric materials
• ISSN: 1613-6810; 1613-6829; 1613-6829
• DOI: 10.1002/smll.202311340

Carrier regulation has proven to be an effective approach for optimizing the thermoelectric performance of materials. One common method to adjust the carrier concentration is through element doping. In the case of AgCuTe‐based materials, it tends to form with cation vacancies, resulting in a high hole concentration and complex phase composition at low temperatures, which also hinders material stability. However, this also offers additional opportunities to manipulate the carrier concentration. In this study, the improved performance of AgCuTe through indium doping is reported, which leads to a reduction in hole concentration. In combination with a significant increase in the effective mass of the carriers, the enhanced Seebeck coefficient is also realized. Particularly, a notable improvement in power factor is observed in the hexagonal phase near room temperature. Furthermore, a lower electron thermal conductivity is achieved, contributing to an average figure of merit value of ≈1.21 (between 523 and 723 K). Additionally, the presence of indium inhibits the formation of the second phase and ensures a homogeneous phase distribution, which reduces the instability arising from phase transition. This work significantly enhances the potential of AgCuTe‐based materials for low to medium‐temperature applications. The high‐temperature melting and SPS techniques are used to prepare the AgCuTe‐based materials with high stability and repeatability. The introduction of indium has resulted in a noteworthy ZT value of ≈1.4 at 723 K, and an impressive enhancement in ZTave values between 523 and 723 K, showcasing a 30% improvement when compared to the pure sample.