Thermal conductivity of AlN and AlN-GaN thin films deposited on Si and GaAs substrates

Thermal properties of thin AlN, AlN-GaN films are analyzed. The investigated films are deposited on different substrates (Si and GaAs). The photothermal measuring method based on thermal wave propagation in layered structure in 3D geometry is used. A new method for experimental data analysis is prop...

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Bibliographic Details
Published in:Diamond and related materials 2005-03, Vol.14 (3-7), p.1169-1174
Main Authors: BODZENTA, J, BURAK, B, JAGODA, A, STANCZYK, B
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Deposition by sputtering
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:Thermal properties of thin AlN, AlN-GaN films are analyzed. The investigated films are deposited on different substrates (Si and GaAs). The photothermal measuring method based on thermal wave propagation in layered structure in 3D geometry is used. A new method for experimental data analysis is proposed. The analysis is carried out after the transformation of measured dependences to the inverse space. Obtained results show that the thermal conductivity is higher for films deposited on GaAs substrates and for AlN-GaN films.
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2005.01.016