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Band-bending Analysis of Metal-Oxide-Semiconductor (MOS) Interface by In Situ Biasing Electron Holography

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Bibliographic Details
Published in:	Microscopy and microanalysis 2023-07, Vol.29 (Supplement_1), p.1338-1339
Main Authors:	Fukushima, Y, Mori, D, Terao, Y, Yamamoto, K, Takigawa, A
Format:	Article
Language:	English
Citations:	Items that this one cites
Online Access:	Get full text
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