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Facet degradation of (Al,In)GaN laser diodes

We study the facet degradation behavior of (Al,In)GaN multiple quantum well laser diodes. Water vapor causes a fast degradation due to facet oxidation of the uncoated facet. Degradation in an inert nitrogen atmosphere is slow and comparable to degradation of GaN laser diodes with coated facets. We a...

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Bibliographic Details
Published in:Physica status solidi. A, Applied research Applied research, 2004-09, Vol.201 (12), p.2635-2638
Main Authors: Schoedl, Thomas, Schwarz, Ulrich T., Miller, Stephan, Leber, Andreas, Furitsch, Michael, Lell, Alfred, Härle, Volker
Format: Article
Language:English
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Summary:We study the facet degradation behavior of (Al,In)GaN multiple quantum well laser diodes. Water vapor causes a fast degradation due to facet oxidation of the uncoated facet. Degradation in an inert nitrogen atmosphere is slow and comparable to degradation of GaN laser diodes with coated facets. We also observe a reversible increase in the threshold current density due to a change in absorption caused by surface charges. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0031-8965
1521-396X
DOI:10.1002/pssa.200404990