Loading…
Facet degradation of (Al,In)GaN laser diodes
We study the facet degradation behavior of (Al,In)GaN multiple quantum well laser diodes. Water vapor causes a fast degradation due to facet oxidation of the uncoated facet. Degradation in an inert nitrogen atmosphere is slow and comparable to degradation of GaN laser diodes with coated facets. We a...
Saved in:
Published in: | Physica status solidi. A, Applied research Applied research, 2004-09, Vol.201 (12), p.2635-2638 |
---|---|
Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | We study the facet degradation behavior of (Al,In)GaN multiple quantum well laser diodes. Water vapor causes a fast degradation due to facet oxidation of the uncoated facet. Degradation in an inert nitrogen atmosphere is slow and comparable to degradation of GaN laser diodes with coated facets. We also observe a reversible increase in the threshold current density due to a change in absorption caused by surface charges. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
---|---|
ISSN: | 0031-8965 1521-396X |
DOI: | 10.1002/pssa.200404990 |