Fabrication of Si nano-pillar array through Ni nano-dot mask using inductively coupled plasma

We formed Si nano-pillar array using inductively coupled plasma (ICP) etching of Si with Ni nano-dot mask. For the formation of Ni nano-dot mask, Ni was deposited on Si substrate using sputtering. Through rapid thermal annealing (RTA) of Ni layer at 700 °C, Ni nano-dot array was formed on Si substra...

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Bibliographic Details
Published in:Thin solid films 2005-03, Vol.475 (1-2), p.41-44
Main Authors: Kim, Mun Ja, Lee, Jin Seung, Kim, Seong Kyu, Yeom, G.Y., Yoo, Ji-Beom, Park, Chong-Yun
Format: Article
Language:English
Subjects:
Ni nano-dot
Photonic crystal
Si nano-pillar
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Summary:We formed Si nano-pillar array using inductively coupled plasma (ICP) etching of Si with Ni nano-dot mask. For the formation of Ni nano-dot mask, Ni was deposited on Si substrate using sputtering. Through rapid thermal annealing (RTA) of Ni layer at 700 °C, Ni nano-dot array was formed on Si substrate. Effects of etching parameters such as rf power, bias voltage and gas composition on the morphologies of Si nano-pillar array were investigated. Optimum etching of Si with Ni nano-dot mask was obtained under the bias voltage of −90 V, power of 1500 W and gas composition of CF4 (70%) and sulfur hexafluoride (SF6; 30%). Si nano-pillar array with a diameter smaller than 50 nm and aspect ratio larger than 10 was formed.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2004.07.026