Effect of growth conditions on the GaN thin film by sputtering deposition

• Published in: Journal of crystal growth 2007-02, Vol.299 (2), p.268-271
• Main Authors: Zhang, C.G., Bian, L.F., Chen, W.D., Hsu, C.C.
• Format: Article
• Language: English
• Subjects: A1. Phase equilibria; A1. Radio-frequency magnetron sputtering; A3. Sputtering; B1. Gallium compounds; B1. Gallium nitride; B2. Semiconducting gallium compounds; B2. Semiconducting III–V materials; Composition and phase identification; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Other semiconductors; Physics; Specific materials; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory and models of film growth; Thin film structure and morphology
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2006.12.009

The phase transition between thermodynamically stable hexagonal wurtzite (h-WZ) gallium nitride (GaN) and metastable cubic zinc-blende (c-ZB) GaN during growth by radio-frequency planar magnetron sputtering is studied. GaN films grown on substrates with lower mismatches tend to have a h-WZ structure, but when grown on substrates with higher mismatches, a c-ZB structure is preferred. GaN films grown under high nitrogen pressure also tend to have a h-WZ structure, whereas a c-ZB structure is preferred when grown under low nitrogen pressure. In addition, low target-power growth not only helps to improve hexagonal GaN (h-GaN) crystalline quality at high nitrogen pressure on low-mismatch substrates, but also enhances cubic GaN (c-GaN) quality at low nitrogen pressure on high-mismatch substrates.