Effects of growth pressure on AlGaN and Mg-doped GaN grown using multiwafer metal organic vapor phase epitaxy system

• Published in: Journal of crystal growth 2004-12, Vol.272 (1), p.348-352
• Main Authors: Tokunaga, H., Ubukata, A., Yano, Y., Yamaguchi, A., Akutsu, N., Yamasaki, T., Matsumoto, K.
• Format: Article
• Language: English
• Subjects: A1. Mg doping; A1. Parasitic reaction; A2. Atmospheric pressure growth; A3. Metalorganic vapor phase epitaxy; B1. AlGaN; B1. GaN; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2004.09.017

We investigated the effects of growth pressure on AlGaN growth and material properties of GaN:Mg using a multiwafer metal organic vapor phase epitaxy (MOVPE) reactor. We developed a three-layer laminar flow gas injection reactor to control the pre-reaction between adducts in GaN MOVPE. Using this reactor, we could grow Al 0.09Ga 0.91N at a growth rate of 0.8 μm/h, and GaN:Mg with a carrier concentration of 1.4×10 18 cm −3 at a growth rate of 3.5 μm/h at atmospheric pressure. While we grew Al 0.24Ga 0.76N at a growth rate of 0.8 μm/h at 300 Torr, we found that the hole carrier concentration of GaN:Mg grown at 300 Torr is more than one order of magnitude lower than that of GaN:Mg grown at atmospheric pressure.