Effects of growth pressure on AlGaN and Mg-doped GaN grown using multiwafer metal organic vapor phase epitaxy system

We investigated the effects of growth pressure on AlGaN growth and material properties of GaN:Mg using a multiwafer metal organic vapor phase epitaxy (MOVPE) reactor. We developed a three-layer laminar flow gas injection reactor to control the pre-reaction between adducts in GaN MOVPE. Using this re...

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Published in:Journal of crystal growth 2004-12, Vol.272 (1), p.348-352
Main Authors: Tokunaga, H., Ubukata, A., Yano, Y., Yamaguchi, A., Akutsu, N., Yamasaki, T., Matsumoto, K.
Format: Article
Language:English
Subjects:
A1. Mg doping
A1. Parasitic reaction
A2. Atmospheric pressure growth
A3. Metalorganic vapor phase epitaxy
B1. AlGaN
B1. GaN
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Vapor phase epitaxy
growth from vapor phase
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cited_by cdi_FETCH-LOGICAL-c437t-b016921ecffaec4237a704eb6248f3e0a31af884ddec3279b363bd6079152b3c3
cites cdi_FETCH-LOGICAL-c437t-b016921ecffaec4237a704eb6248f3e0a31af884ddec3279b363bd6079152b3c3
container_end_page 352
container_issue 1
container_start_page 348
container_title Journal of crystal growth
container_volume 272
creator Tokunaga, H.
Ubukata, A.
Yano, Y.
Yamaguchi, A.
Akutsu, N.
Yamasaki, T.
Matsumoto, K.
description We investigated the effects of growth pressure on AlGaN growth and material properties of GaN:Mg using a multiwafer metal organic vapor phase epitaxy (MOVPE) reactor. We developed a three-layer laminar flow gas injection reactor to control the pre-reaction between adducts in GaN MOVPE. Using this reactor, we could grow Al 0.09Ga 0.91N at a growth rate of 0.8 μm/h, and GaN:Mg with a carrier concentration of 1.4×10 18 cm −3 at a growth rate of 3.5 μm/h at atmospheric pressure. While we grew Al 0.24Ga 0.76N at a growth rate of 0.8 μm/h at 300 Torr, we found that the hole carrier concentration of GaN:Mg grown at 300 Torr is more than one order of magnitude lower than that of GaN:Mg grown at atmospheric pressure.
doi_str_mv 10.1016/j.jcrysgro.2004.09.017
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subjects A1. Mg doping
A1. Parasitic reaction
A2. Atmospheric pressure growth
A3. Metalorganic vapor phase epitaxy
B1. AlGaN
B1. GaN
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Vapor phase epitaxy
growth from vapor phase
title Effects of growth pressure on AlGaN and Mg-doped GaN grown using multiwafer metal organic vapor phase epitaxy system
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