Effects of Thermal Annealing on Al-Doped ZnO Films Deposited on p-Type Gallium Nitride

In this study, Al-doped ZnO (AZO) and Ni/AZO films were deposited on p-type GaN films followed by thermal annealing to form ohmic contacts. After thermal annealing, the resistivities of AZO films reduced from 5 X 10-3 to 4-6 X 10-4 11 cm. Both as-deposited AZO and Ni/AZO contacts on p-GaN displayed...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2006-01, Vol.153 (4), p.G296-G298
Main Authors: Tun, C J, Sheu, J K, Lee, M L, Hu, C C, Hsieh, C K, Chi, G C
Format: Article
Language:English
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Summary:In this study, Al-doped ZnO (AZO) and Ni/AZO films were deposited on p-type GaN films followed by thermal annealing to form ohmic contacts. After thermal annealing, the resistivities of AZO films reduced from 5 X 10-3 to 4-6 X 10-4 11 cm. Both as-deposited AZO and Ni/AZO contacts on p-GaN displayed a non-ohmic characteristic. Only the 800DGC-annealed Ni/AZO contacts exhibited a linear current-voltage characteristic, showing a specific contact resistance of around 1.2 X 10-2 fl em2. After undergoing the annealing in nitrogen ambience, the light transmittance of the Ni/AZO films increased from 70% to higher than 90% in the visible range. These results revealed that the Ni/AZO contact can serve as a suitable transparent current spreading layer for the fabrication of GaN-based light-emitting devices.
ISSN:0013-4651
DOI:10.1149/1.2171817