Aging characteristics of II-VI yellow light emitting diodes with beryllium chalcogenide (BeZnSeTe) active layers on InP substrates

Aging characteristics of BeZnSeTe II–VI yellow light emitting diodes (LEDs) fabricated on InP substrates by molecuar beam epitaxy were investigated under higher current injections from 130 to 900 A/cm2 at room temperature. Light output decays during the aging are approximated using the decay model b...

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Bibliographic Details
Published in:Physica status solidi. A, Applied research Applied research, 2004-09, Vol.201 (12), p.2708-2711
Main Authors: Nakai, Yuki, Nomura, Ichirou, Takashima, Yasushi, Kikuchi, Akihiko, Kishino, Katsumi
Format: Article
Language:English
Subjects:
78.60.Fi
81.05.Dz
85.60.Jb
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Aging characteristics of BeZnSeTe II–VI yellow light emitting diodes (LEDs) fabricated on InP substrates by molecuar beam epitaxy were investigated under higher current injections from 130 to 900 A/cm2 at room temperature. Light output decays during the aging are approximated using the decay model based on the carrier‐recombination enhanced defect motion. Half lifetimes estimated from the approximations are compared with the literature data of ZnCdSe/MgZnSSe LEDs, which clearly indicates quite long lifetimes of the BeZnSeTe LEDs. In fact a long lifetime more than 2500 h was obtained at the injection current density of 130 A/cm2 with no gradual decay except for the slight initial decay. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0031-8965
1521-396X
DOI:10.1002/pssa.200405106