Failure modes in silicon avalanche transit-time microwave devices

A type of avalanche diode has been subjected to accelerated life test and to failure analysis. The primary failure mechanism is believed to be a form of second breakdown; no significant progressive degradation was observed.

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Bibliographic Details
Published in:IEEE transactions on electron devices 1967-09, Vol.14 (9), p.619-620
Main Authors: Schenck, J.F., Midford, T.A.
Format: Article
Language:English
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Description
Summary:A type of avalanche diode has been subjected to accelerated life test and to failure analysis. The primary failure mechanism is believed to be a form of second breakdown; no significant progressive degradation was observed.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1967.16019