Electrical Characterization and Surface Morphology of Optimized Ti∕Al∕Ti∕Au Ohmic Contacts for AlGaN∕GaN HEMTs

Low-resistance ohmic contacts to high-electron-mobility transistors (HEMTs) are essential to ensure optimal device performance. Besides low contact resistance ( < 1 Omega mm), good surface morphology and edge acuity are also desirable. We report a systematic study of the ohmic contact scheme Ti/A...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2006-01, Vol.153 (8), p.G746-G749
Main Authors: Bardwell, J. A., Haffouz, S., Tang, H., Wang, R.
Format: Article
Language:English
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Summary:Low-resistance ohmic contacts to high-electron-mobility transistors (HEMTs) are essential to ensure optimal device performance. Besides low contact resistance ( < 1 Omega mm), good surface morphology and edge acuity are also desirable. We report a systematic study of the ohmic contact scheme Ti/Al/Ti/Au, where the total film thickness was kept constant at 285 nm and the relative ratios of Ti/Al inner layer thicknesses were varied. While the film with the highest Ti/Al ratio had slightly inferior electrical properties, the layer smoothness and edge acuity were far superior to the other ohmic contact schemes.
ISSN:0013-4651
DOI:10.1149/1.2206998