Growth and characterization of Mn-doped cubic-GaN

We report on the growth and characterization of Mn-doped cubic-GaN films. The n-type carriers, which are resulting from the formation of nitrogen vacancies, were intentionally utilized. For a 3% Mn sample with a high carrier density (∼1×10 20 cm −3), we found substitutional Mn atoms on both the Ga-s...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2006-04, Vol.376, p.658-662
Main Authors: Takano, Fumiyoshi, Ofuchi, Hironori, Lee, JeungWoo, Takita, Kôki, Akinaga, Hiro
Format: Article
Language:English
Subjects:
Cubic GaN:Mn
Magnetism
RF-plasma-assisted MBE
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Summary:We report on the growth and characterization of Mn-doped cubic-GaN films. The n-type carriers, which are resulting from the formation of nitrogen vacancies, were intentionally utilized. For a 3% Mn sample with a high carrier density (∼1×10 20 cm −3), we found substitutional Mn atoms on both the Ga-site and N-site, i.e., (Ga,Mn)N and Ga(N,Mn) exist together. A ferromagnetic behavior was observed in this sample at low temperature (∼5 K), although a 3% Mn semi-insulating sample in which Mn atoms substitute only the Ga-sites in the cubic-GaN lattice showed paramagnetism even at low temperature. The structural and magnetic properties of the relatively high Mn composition (⩾5%) samples were found to be governed by precipitate clusters of antiferromagnetic GaMn 3N and ferromagnetic Mn 4N.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2005.12.166