Growth and characterization of Mn-doped cubic-GaN

We report on the growth and characterization of Mn-doped cubic-GaN films. The n-type carriers, which are resulting from the formation of nitrogen vacancies, were intentionally utilized. For a 3% Mn sample with a high carrier density (∼1×10 20 cm −3), we found substitutional Mn atoms on both the Ga-s...

Full description

Saved in:
Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2006-04, Vol.376, p.658-662
Main Authors: Takano, Fumiyoshi, Ofuchi, Hironori, Lee, JeungWoo, Takita, Kôki, Akinaga, Hiro
Format: Article
Language:English
Subjects:
Cubic GaN:Mn
Magnetism
RF-plasma-assisted MBE
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c334t-93601aa58d8995f15129985805573964fdf3d51072e9fb785c98185679889fc03
cites cdi_FETCH-LOGICAL-c334t-93601aa58d8995f15129985805573964fdf3d51072e9fb785c98185679889fc03
container_end_page 662
container_issue
container_start_page 658
container_title Physica. B, Condensed matter
container_volume 376
creator Takano, Fumiyoshi
Ofuchi, Hironori
Lee, JeungWoo
Takita, Kôki
Akinaga, Hiro
description We report on the growth and characterization of Mn-doped cubic-GaN films. The n-type carriers, which are resulting from the formation of nitrogen vacancies, were intentionally utilized. For a 3% Mn sample with a high carrier density (∼1×10 20 cm −3), we found substitutional Mn atoms on both the Ga-site and N-site, i.e., (Ga,Mn)N and Ga(N,Mn) exist together. A ferromagnetic behavior was observed in this sample at low temperature (∼5 K), although a 3% Mn semi-insulating sample in which Mn atoms substitute only the Ga-sites in the cubic-GaN lattice showed paramagnetism even at low temperature. The structural and magnetic properties of the relatively high Mn composition (⩾5%) samples were found to be governed by precipitate clusters of antiferromagnetic GaMn 3N and ferromagnetic Mn 4N.
doi_str_mv 10.1016/j.physb.2005.12.166
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29266696</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0921452605015541</els_id><sourcerecordid>29266696</sourcerecordid><originalsourceid>FETCH-LOGICAL-c334t-93601aa58d8995f15129985805573964fdf3d51072e9fb785c98185679889fc03</originalsourceid><addsrcrecordid>eNp9kLtOAzEQRS0EEiHwBTRb0Xnx2LHXLihQBAEpQAO15fihOErWi70Bha_PhlAzzS3mnpHmIHQNpAYC4nZVd8tdWdSUEF4DrUGIEzQC2TBMgfFTNCKKAp5wKs7RRSkrMgw0MEIwy-m7X1amdZVdmmxs73P8MX1MbZVC9dJilzo_LLeLaPHMvF6is2DWxV_95Rh9PD68T5_w_G32PL2fY8vYpMeKCQLGcOmkUjwAB6qU5JJw3jAlJsEF5jiQhnoVFo3kVkmQXDRKShUsYWN0c7zb5fS59aXXm1isX69N69O2aKqoEEKJociORZtTKdkH3eW4MXmngeiDHr3Sv3r0QY8Gqgc9A3V3pPzww1f0WRcbfWu9i9nbXrsU_-X385ZsdQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29266696</pqid></control><display><type>article</type><title>Growth and characterization of Mn-doped cubic-GaN</title><source>ScienceDirect Freedom Collection</source><creator>Takano, Fumiyoshi ; Ofuchi, Hironori ; Lee, JeungWoo ; Takita, Kôki ; Akinaga, Hiro</creator><creatorcontrib>Takano, Fumiyoshi ; Ofuchi, Hironori ; Lee, JeungWoo ; Takita, Kôki ; Akinaga, Hiro</creatorcontrib><description>We report on the growth and characterization of Mn-doped cubic-GaN films. The n-type carriers, which are resulting from the formation of nitrogen vacancies, were intentionally utilized. For a 3% Mn sample with a high carrier density (∼1×10 20 cm −3), we found substitutional Mn atoms on both the Ga-site and N-site, i.e., (Ga,Mn)N and Ga(N,Mn) exist together. A ferromagnetic behavior was observed in this sample at low temperature (∼5 K), although a 3% Mn semi-insulating sample in which Mn atoms substitute only the Ga-sites in the cubic-GaN lattice showed paramagnetism even at low temperature. The structural and magnetic properties of the relatively high Mn composition (⩾5%) samples were found to be governed by precipitate clusters of antiferromagnetic GaMn 3N and ferromagnetic Mn 4N.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2005.12.166</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Cubic GaN:Mn ; Magnetism ; RF-plasma-assisted MBE</subject><ispartof>Physica. B, Condensed matter, 2006-04, Vol.376, p.658-662</ispartof><rights>2006 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c334t-93601aa58d8995f15129985805573964fdf3d51072e9fb785c98185679889fc03</citedby><cites>FETCH-LOGICAL-c334t-93601aa58d8995f15129985805573964fdf3d51072e9fb785c98185679889fc03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Takano, Fumiyoshi</creatorcontrib><creatorcontrib>Ofuchi, Hironori</creatorcontrib><creatorcontrib>Lee, JeungWoo</creatorcontrib><creatorcontrib>Takita, Kôki</creatorcontrib><creatorcontrib>Akinaga, Hiro</creatorcontrib><title>Growth and characterization of Mn-doped cubic-GaN</title><title>Physica. B, Condensed matter</title><description>We report on the growth and characterization of Mn-doped cubic-GaN films. The n-type carriers, which are resulting from the formation of nitrogen vacancies, were intentionally utilized. For a 3% Mn sample with a high carrier density (∼1×10 20 cm −3), we found substitutional Mn atoms on both the Ga-site and N-site, i.e., (Ga,Mn)N and Ga(N,Mn) exist together. A ferromagnetic behavior was observed in this sample at low temperature (∼5 K), although a 3% Mn semi-insulating sample in which Mn atoms substitute only the Ga-sites in the cubic-GaN lattice showed paramagnetism even at low temperature. The structural and magnetic properties of the relatively high Mn composition (⩾5%) samples were found to be governed by precipitate clusters of antiferromagnetic GaMn 3N and ferromagnetic Mn 4N.</description><subject>Cubic GaN:Mn</subject><subject>Magnetism</subject><subject>RF-plasma-assisted MBE</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp9kLtOAzEQRS0EEiHwBTRb0Xnx2LHXLihQBAEpQAO15fihOErWi70Bha_PhlAzzS3mnpHmIHQNpAYC4nZVd8tdWdSUEF4DrUGIEzQC2TBMgfFTNCKKAp5wKs7RRSkrMgw0MEIwy-m7X1amdZVdmmxs73P8MX1MbZVC9dJilzo_LLeLaPHMvF6is2DWxV_95Rh9PD68T5_w_G32PL2fY8vYpMeKCQLGcOmkUjwAB6qU5JJw3jAlJsEF5jiQhnoVFo3kVkmQXDRKShUsYWN0c7zb5fS59aXXm1isX69N69O2aKqoEEKJociORZtTKdkH3eW4MXmngeiDHr3Sv3r0QY8Gqgc9A3V3pPzww1f0WRcbfWu9i9nbXrsU_-X385ZsdQ</recordid><startdate>20060401</startdate><enddate>20060401</enddate><creator>Takano, Fumiyoshi</creator><creator>Ofuchi, Hironori</creator><creator>Lee, JeungWoo</creator><creator>Takita, Kôki</creator><creator>Akinaga, Hiro</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20060401</creationdate><title>Growth and characterization of Mn-doped cubic-GaN</title><author>Takano, Fumiyoshi ; Ofuchi, Hironori ; Lee, JeungWoo ; Takita, Kôki ; Akinaga, Hiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c334t-93601aa58d8995f15129985805573964fdf3d51072e9fb785c98185679889fc03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Cubic GaN:Mn</topic><topic>Magnetism</topic><topic>RF-plasma-assisted MBE</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Takano, Fumiyoshi</creatorcontrib><creatorcontrib>Ofuchi, Hironori</creatorcontrib><creatorcontrib>Lee, JeungWoo</creatorcontrib><creatorcontrib>Takita, Kôki</creatorcontrib><creatorcontrib>Akinaga, Hiro</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Takano, Fumiyoshi</au><au>Ofuchi, Hironori</au><au>Lee, JeungWoo</au><au>Takita, Kôki</au><au>Akinaga, Hiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth and characterization of Mn-doped cubic-GaN</atitle><jtitle>Physica. B, Condensed matter</jtitle><date>2006-04-01</date><risdate>2006</risdate><volume>376</volume><spage>658</spage><epage>662</epage><pages>658-662</pages><issn>0921-4526</issn><eissn>1873-2135</eissn><abstract>We report on the growth and characterization of Mn-doped cubic-GaN films. The n-type carriers, which are resulting from the formation of nitrogen vacancies, were intentionally utilized. For a 3% Mn sample with a high carrier density (∼1×10 20 cm −3), we found substitutional Mn atoms on both the Ga-site and N-site, i.e., (Ga,Mn)N and Ga(N,Mn) exist together. A ferromagnetic behavior was observed in this sample at low temperature (∼5 K), although a 3% Mn semi-insulating sample in which Mn atoms substitute only the Ga-sites in the cubic-GaN lattice showed paramagnetism even at low temperature. The structural and magnetic properties of the relatively high Mn composition (⩾5%) samples were found to be governed by precipitate clusters of antiferromagnetic GaMn 3N and ferromagnetic Mn 4N.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.physb.2005.12.166</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0921-4526
ispartof Physica. B, Condensed matter, 2006-04, Vol.376, p.658-662
issn 0921-4526
1873-2135
language eng
recordid cdi_proquest_miscellaneous_29266696
source ScienceDirect Freedom Collection
subjects Cubic GaN:Mn
Magnetism
RF-plasma-assisted MBE
title Growth and characterization of Mn-doped cubic-GaN
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T01%3A02%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20and%20characterization%20of%20Mn-doped%20cubic-GaN&rft.jtitle=Physica.%20B,%20Condensed%20matter&rft.au=Takano,%20Fumiyoshi&rft.date=2006-04-01&rft.volume=376&rft.spage=658&rft.epage=662&rft.pages=658-662&rft.issn=0921-4526&rft.eissn=1873-2135&rft_id=info:doi/10.1016/j.physb.2005.12.166&rft_dat=%3Cproquest_cross%3E29266696%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c334t-93601aa58d8995f15129985805573964fdf3d51072e9fb785c98185679889fc03%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=29266696&rft_id=info:pmid/&rfr_iscdi=true