Loading…
Gd-substituted bismuth titanate film capacitors having ferroelectric reliability and large non-volatile charges
Fatigue-free Gd-modified bismuth titanate (Bi 3.15Gd 0.85Ti 3O 12; BGdT) film capacitors having stable charge-retaining characteristics were grown on Pt/TiO 2/SiO 2/Si(1 0 0) substrates using the method of metal-organic sol decomposition. The BGdT film capacitor with a top Pt electrode showed signif...
Saved in:
| Published in: | Physica. B, Condensed matter Condensed matter, 2007-01, Vol.388 (1), p.190-194 |
|---|---|
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | cdi_FETCH-LOGICAL-c364t-31ddcfbbed9061497b102275a643a7c0c0869ab762fe2660edcb668ae0e65dcf3 |
|---|---|
| cites | cdi_FETCH-LOGICAL-c364t-31ddcfbbed9061497b102275a643a7c0c0869ab762fe2660edcb668ae0e65dcf3 |
| container_end_page | 194 |
| container_issue | 1 |
| container_start_page | 190 |
| container_title | Physica. B, Condensed matter |
| container_volume | 388 |
| creator | Chon, Uong Jang, Hyun M. Shin, Nam S. Kim, Jae S. Ahn, Do C. Kim, Yun S. No, Kwangsoo |
| description | Fatigue-free Gd-modified bismuth titanate (Bi
3.15Gd
0.85Ti
3O
12; BGdT) film capacitors having stable charge-retaining characteristics were grown on Pt/TiO
2/SiO
2/Si(1
0
0) substrates using the method of metal-organic sol decomposition. The BGdT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (2
P
r) and the non-volatile charge as compared to those of the Bi
4−
x
La
x
Ti
3O
12 (BLT;
x=0.75) film capacitor, currently renowned as a promising candidate for non-volatile memories. The saturated 2
P
r value of the BGdT capacitor was 75
μC/cm
2 while it remained essentially constant up to 4.5×10
10 read/write switching cycles at a frequency of 1
MHz. In addition to these, the capacitor demonstrated excellent charge-retention characteristics with its sensing margin of 52
μC/cm
2 and a strong resistance against the imprinting failure. |
| doi_str_mv | 10.1016/j.physb.2006.05.434 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29274683</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0921452606012713</els_id><sourcerecordid>29274683</sourcerecordid><originalsourceid>FETCH-LOGICAL-c364t-31ddcfbbed9061497b102275a643a7c0c0869ab762fe2660edcb668ae0e65dcf3</originalsourceid><addsrcrecordid>eNp9kD9v2zAQxYkgBeKk_QRduKSbFP6RKGnIEASNUyBAlnYmjuQppkGLDkkZ8LevHAfo1lsOd3jvHe5HyHfOas64utvW-80xm1owpmrW1o1sLsiK952sBJftJVmxQfCqaYW6Itc5b9lSvOMrEteuyrPJxZe5oKPG591cNnSZYYKCdPRhRy3swfoSU6YbOPjpjY6YUsSAtiRvacLgwfjgy5HC5GiA9IZ0ilN1iAGKD0jt5rTLX8mXEULGb5_9hvx5-vn78bl6eV3_enx4qaxUTakkd86OxqAbmOLN0BnOhOhaUI2EzjLLejWA6ZQYUSjF0FmjVA_IULWLU96QH-fcfYrvM-aidz5bDAEmjHPWYhBdo3q5COVZaFPMOeGo98nvIB01Z_oEV2_1B1x9gqtZqxe4i-v2Mx6yhTAmmKzP_6x90_ZCnXT3Zx0uvx48Jp2tx8mi82lhp130_73zFx8UlDc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29274683</pqid></control><display><type>article</type><title>Gd-substituted bismuth titanate film capacitors having ferroelectric reliability and large non-volatile charges</title><source>ScienceDirect Journals</source><creator>Chon, Uong ; Jang, Hyun M. ; Shin, Nam S. ; Kim, Jae S. ; Ahn, Do C. ; Kim, Yun S. ; No, Kwangsoo</creator><creatorcontrib>Chon, Uong ; Jang, Hyun M. ; Shin, Nam S. ; Kim, Jae S. ; Ahn, Do C. ; Kim, Yun S. ; No, Kwangsoo</creatorcontrib><description>Fatigue-free Gd-modified bismuth titanate (Bi
3.15Gd
0.85Ti
3O
12; BGdT) film capacitors having stable charge-retaining characteristics were grown on Pt/TiO
2/SiO
2/Si(1
0
0) substrates using the method of metal-organic sol decomposition. The BGdT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (2
P
r) and the non-volatile charge as compared to those of the Bi
4−
x
La
x
Ti
3O
12 (BLT;
x=0.75) film capacitor, currently renowned as a promising candidate for non-volatile memories. The saturated 2
P
r value of the BGdT capacitor was 75
μC/cm
2 while it remained essentially constant up to 4.5×10
10 read/write switching cycles at a frequency of 1
MHz. In addition to these, the capacitor demonstrated excellent charge-retention characteristics with its sensing margin of 52
μC/cm
2 and a strong resistance against the imprinting failure.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2006.05.434</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Domain structure; hysteresis ; Electronics ; Exact sciences and technology ; Fatigue-free ; Ferroelectric ; Ferroelectricity and antiferroelectricity ; FRAM ; Gadolinium-modified bismuth titanate ; Integrated circuits ; Integrated circuits by function (including memories and processors) ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Physica. B, Condensed matter, 2007-01, Vol.388 (1), p.190-194</ispartof><rights>2006 Elsevier B.V.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c364t-31ddcfbbed9061497b102275a643a7c0c0869ab762fe2660edcb668ae0e65dcf3</citedby><cites>FETCH-LOGICAL-c364t-31ddcfbbed9061497b102275a643a7c0c0869ab762fe2660edcb668ae0e65dcf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18458264$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Chon, Uong</creatorcontrib><creatorcontrib>Jang, Hyun M.</creatorcontrib><creatorcontrib>Shin, Nam S.</creatorcontrib><creatorcontrib>Kim, Jae S.</creatorcontrib><creatorcontrib>Ahn, Do C.</creatorcontrib><creatorcontrib>Kim, Yun S.</creatorcontrib><creatorcontrib>No, Kwangsoo</creatorcontrib><title>Gd-substituted bismuth titanate film capacitors having ferroelectric reliability and large non-volatile charges</title><title>Physica. B, Condensed matter</title><description>Fatigue-free Gd-modified bismuth titanate (Bi
3.15Gd
0.85Ti
3O
12; BGdT) film capacitors having stable charge-retaining characteristics were grown on Pt/TiO
2/SiO
2/Si(1
0
0) substrates using the method of metal-organic sol decomposition. The BGdT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (2
P
r) and the non-volatile charge as compared to those of the Bi
4−
x
La
x
Ti
3O
12 (BLT;
x=0.75) film capacitor, currently renowned as a promising candidate for non-volatile memories. The saturated 2
P
r value of the BGdT capacitor was 75
μC/cm
2 while it remained essentially constant up to 4.5×10
10 read/write switching cycles at a frequency of 1
MHz. In addition to these, the capacitor demonstrated excellent charge-retention characteristics with its sensing margin of 52
μC/cm
2 and a strong resistance against the imprinting failure.</description><subject>Applied sciences</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Dielectrics, piezoelectrics, and ferroelectrics and their properties</subject><subject>Domain structure; hysteresis</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fatigue-free</subject><subject>Ferroelectric</subject><subject>Ferroelectricity and antiferroelectricity</subject><subject>FRAM</subject><subject>Gadolinium-modified bismuth titanate</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp9kD9v2zAQxYkgBeKk_QRduKSbFP6RKGnIEASNUyBAlnYmjuQppkGLDkkZ8LevHAfo1lsOd3jvHe5HyHfOas64utvW-80xm1owpmrW1o1sLsiK952sBJftJVmxQfCqaYW6Itc5b9lSvOMrEteuyrPJxZe5oKPG591cNnSZYYKCdPRhRy3swfoSU6YbOPjpjY6YUsSAtiRvacLgwfjgy5HC5GiA9IZ0ilN1iAGKD0jt5rTLX8mXEULGb5_9hvx5-vn78bl6eV3_enx4qaxUTakkd86OxqAbmOLN0BnOhOhaUI2EzjLLejWA6ZQYUSjF0FmjVA_IULWLU96QH-fcfYrvM-aidz5bDAEmjHPWYhBdo3q5COVZaFPMOeGo98nvIB01Z_oEV2_1B1x9gqtZqxe4i-v2Mx6yhTAmmKzP_6x90_ZCnXT3Zx0uvx48Jp2tx8mi82lhp130_73zFx8UlDc</recordid><startdate>20070101</startdate><enddate>20070101</enddate><creator>Chon, Uong</creator><creator>Jang, Hyun M.</creator><creator>Shin, Nam S.</creator><creator>Kim, Jae S.</creator><creator>Ahn, Do C.</creator><creator>Kim, Yun S.</creator><creator>No, Kwangsoo</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20070101</creationdate><title>Gd-substituted bismuth titanate film capacitors having ferroelectric reliability and large non-volatile charges</title><author>Chon, Uong ; Jang, Hyun M. ; Shin, Nam S. ; Kim, Jae S. ; Ahn, Do C. ; Kim, Yun S. ; No, Kwangsoo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-31ddcfbbed9061497b102275a643a7c0c0869ab762fe2660edcb668ae0e65dcf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Applied sciences</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Dielectrics, piezoelectrics, and ferroelectrics and their properties</topic><topic>Domain structure; hysteresis</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fatigue-free</topic><topic>Ferroelectric</topic><topic>Ferroelectricity and antiferroelectricity</topic><topic>FRAM</topic><topic>Gadolinium-modified bismuth titanate</topic><topic>Integrated circuits</topic><topic>Integrated circuits by function (including memories and processors)</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chon, Uong</creatorcontrib><creatorcontrib>Jang, Hyun M.</creatorcontrib><creatorcontrib>Shin, Nam S.</creatorcontrib><creatorcontrib>Kim, Jae S.</creatorcontrib><creatorcontrib>Ahn, Do C.</creatorcontrib><creatorcontrib>Kim, Yun S.</creatorcontrib><creatorcontrib>No, Kwangsoo</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chon, Uong</au><au>Jang, Hyun M.</au><au>Shin, Nam S.</au><au>Kim, Jae S.</au><au>Ahn, Do C.</au><au>Kim, Yun S.</au><au>No, Kwangsoo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Gd-substituted bismuth titanate film capacitors having ferroelectric reliability and large non-volatile charges</atitle><jtitle>Physica. B, Condensed matter</jtitle><date>2007-01-01</date><risdate>2007</risdate><volume>388</volume><issue>1</issue><spage>190</spage><epage>194</epage><pages>190-194</pages><issn>0921-4526</issn><eissn>1873-2135</eissn><abstract>Fatigue-free Gd-modified bismuth titanate (Bi
3.15Gd
0.85Ti
3O
12; BGdT) film capacitors having stable charge-retaining characteristics were grown on Pt/TiO
2/SiO
2/Si(1
0
0) substrates using the method of metal-organic sol decomposition. The BGdT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (2
P
r) and the non-volatile charge as compared to those of the Bi
4−
x
La
x
Ti
3O
12 (BLT;
x=0.75) film capacitor, currently renowned as a promising candidate for non-volatile memories. The saturated 2
P
r value of the BGdT capacitor was 75
μC/cm
2 while it remained essentially constant up to 4.5×10
10 read/write switching cycles at a frequency of 1
MHz. In addition to these, the capacitor demonstrated excellent charge-retention characteristics with its sensing margin of 52
μC/cm
2 and a strong resistance against the imprinting failure.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.physb.2006.05.434</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0921-4526 |
| ispartof | Physica. B, Condensed matter, 2007-01, Vol.388 (1), p.190-194 |
| issn | 0921-4526 1873-2135 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_29274683 |
| source | ScienceDirect Journals |
| subjects | Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Dielectrics, piezoelectrics, and ferroelectrics and their properties Domain structure hysteresis Electronics Exact sciences and technology Fatigue-free Ferroelectric Ferroelectricity and antiferroelectricity FRAM Gadolinium-modified bismuth titanate Integrated circuits Integrated circuits by function (including memories and processors) Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Gd-substituted bismuth titanate film capacitors having ferroelectric reliability and large non-volatile charges |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T02%3A03%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Gd-substituted%20bismuth%20titanate%20film%20capacitors%20having%20ferroelectric%20reliability%20and%20large%20non-volatile%20charges&rft.jtitle=Physica.%20B,%20Condensed%20matter&rft.au=Chon,%20Uong&rft.date=2007-01-01&rft.volume=388&rft.issue=1&rft.spage=190&rft.epage=194&rft.pages=190-194&rft.issn=0921-4526&rft.eissn=1873-2135&rft_id=info:doi/10.1016/j.physb.2006.05.434&rft_dat=%3Cproquest_cross%3E29274683%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c364t-31ddcfbbed9061497b102275a643a7c0c0869ab762fe2660edcb668ae0e65dcf3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=29274683&rft_id=info:pmid/&rfr_iscdi=true |