High strain behavior of composite thin film piezoelectric membranes

The behavior of thin-film piezoelectric membranes at high deflections and strains for use as generators is examined. Experiments are conducted with a bulge tester to obtain pressure–deflection relationships, residual stresses, and electrical output characteristics of the piezoelectric membranes. A m...

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Bibliographic Details
Published in:Microelectronic engineering 2004-07, Vol.75 (1), p.12-23
Main Authors: Demir, I., Olson, A.L., Skinner, J.L., Richards, C.D., Richards, R.F., Bahr, D.F.
Format: Article
Language:English
Subjects:
Acoustic wave devices, piezoelectric and piezoresistive devices
Applied sciences
Electronics
Exact sciences and technology
Materials
MEMS
Microelectronic fabrication (materials and surfaces technology)
Miscellaneous
PZT
Residual stress
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The behavior of thin-film piezoelectric membranes at high deflections and strains for use as generators is examined. Experiments are conducted with a bulge tester to obtain pressure–deflection relationships, residual stresses, and electrical output characteristics of the piezoelectric membranes. A model is developed using an energy minimization technique. The experimental results are compared to the modeled results. Experimental results have shown that increasing PZT thickness and the Ti ratio of the PZT chemistry lead to increased power output for a given deflection. The presence of tensile residual stress in the composite structure can result in lower deflections for a given force and thus impact electrical output. Increasing the Ti ratio leads to a reduction in residual stress.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2003.10.007