Free layer stabilized spin valve through a non-magnetic spacer

The spin valve thin film of a free layer biased structure with an antiferromagnet through a non‐magnetic spacer layer has fabricated by a two step annealing process. An exchange bias field strength and a MR ratio were analysed as a function of Cu spacer thickness. An oxide layer of Cu also was selec...

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Bibliographic Details
Published in:Physica status solidi. A, Applied research Applied research, 2004-06, Vol.201 (8), p.1739-1742
Main Authors: Yoo, Yong-Goo, Cheong, Woo Seok, Kim, Ki Chul, Suh, Jeong Dae
Format: Article
Language:English
Subjects:
75.47.De
75.50.Ee
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Giant magnetoresistance
Magnetic properties and materials
Magnetotransport phenomena, materials for magnetotransport
Physics
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Summary:The spin valve thin film of a free layer biased structure with an antiferromagnet through a non‐magnetic spacer layer has fabricated by a two step annealing process. An exchange bias field strength and a MR ratio were analysed as a function of Cu spacer thickness. An oxide layer of Cu also was selected as the spacer layer in odrer to enhance the MR ratio by specular scattering. The exchange bias field and a coercivity showed an exponential decrease with increasing Cu spacer thickness as an initial annealed. The maximum MR ratio appeared at 8 Å Cu spacer thickness. After a second perpendicular annealing, the free layer biased thin film showed slightly higher MR ratio and lower squareness in case of CuO spacer layer. The applying field strength affected perpendicular alignment of the free layer during the second perpendicular annealing process. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0031-8965
1521-396X
DOI:10.1002/pssa.200304623