GSMBE growth of GaInAsP/InP 1.3mum-TM-lasers for monolithic integration with optical waveguide isolator

The GSMBE growth of GaInAsP/InP 1.3-mum-TM active core and highly p-doped contacting layers required for fabricating an integrated optical waveguide isolator is studied in detail. The deposition of a highly doped 1.17-mum-GaInAsP:Be contacting layers provide a good electrical contact between the III...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 2005-05, Vol.278 (1-4), p.709-713
Main Authors: Lelarge, F, Dagens, B, Cuisin, C, Gouezigou, O Le, Patriarche, G, Van Parys, W, Vanwolleghem, M, Baets, R, Gentner, J L
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The GSMBE growth of GaInAsP/InP 1.3-mum-TM active core and highly p-doped contacting layers required for fabricating an integrated optical waveguide isolator is studied in detail. The deposition of a highly doped 1.17-mum-GaInAsP:Be contacting layers provide a good electrical contact between the III-V semiconductor and the ferromagnetic metal is reported. The GSMBE growth of strain-compensated GaInAsP multiple-quantum wells (QWs) allows one to stack up to fifteen 12-nm-thick -1.1% tensile-strained QWs. Broad area TM-lasers with threshold a current density of 0.8kA/cm2 and characteristic temperature of 75K (in the range of 20-80 deg C) are obtained for 600mum-long lasers comprising 6QWs. The possible wavelength extension of TM lasers to 1.55-mum is also discussed.
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2004.12.154