Photoluminescence of Defects in Sn2P2S6 Crystals

The emission and excitation spectra of luminescence of Sn 2 P 2 S 6 crystals were studied within wide temperature (12-360 K) and spectral (260-1200 nm) regions. Analysis of the photoluminescence emission spectra revealed five overlapping bands of nearly Gaussian shape peaking near 1.98, 1.72, 1.48,...

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Published in:Ferroelectrics 2006-01, Vol.334 (1), p.171-179
Main Authors: Potůček, Z., Bryknar, Z.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
optical transmission
Photoluminescence
photoluminescence spectra
Physics
sulfur vacancies
Tin hypothiodiphosphate
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Bryknar, Z.
description The emission and excitation spectra of luminescence of Sn 2 P 2 S 6 crystals were studied within wide temperature (12-360 K) and spectral (260-1200 nm) regions. Analysis of the photoluminescence emission spectra revealed five overlapping bands of nearly Gaussian shape peaking near 1.98, 1.72, 1.48, 1.28, and 1.02 eV at 12 K. Annealing of the orange tinted crystal in vacuum at 300°C for 30 minutes caused a substantial increase of photoluminescence intensity in comparison to the as-grown crystal and their brown coloration. The origin of photoluminescence of the Sn 2 P 2 S 6 crystals was connected with sulfur vacancies.
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subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
optical transmission
Photoluminescence
photoluminescence spectra
Physics
sulfur vacancies
Tin hypothiodiphosphate
title Photoluminescence of Defects in Sn2P2S6 Crystals
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