Growth mechanism of WC-TiAlN heterostructure film

New WC-TiAlN heterostructure films have been deposited on Si substrates (100) using a cathodic arc ion plating system. A substrate holder is fixed at 4 rpm and the arc power density of the Al cathodes is controlled to change the Al concentration in the film. The chemical composition of WC-TiAlN hete...

Full description

Saved in:
Bibliographic Details
Published in:Materials letters 2005-07, Vol.59 (16), p.2021-2025
Main Authors: Lee, Ho Y., Han, Jeon G.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:New WC-TiAlN heterostructure films have been deposited on Si substrates (100) using a cathodic arc ion plating system. A substrate holder is fixed at 4 rpm and the arc power density of the Al cathodes is controlled to change the Al concentration in the film. The chemical composition of WC-TiAlN heterostructure film is analyzed by auger electron spectrometer (AES). The microstructure and mechanical properties of the film depend on the Al concentration. Through transmission electron microscope (TEM) analysis, the microstructure and heterostructure period ( λ) of the WC-TiAlN heterostructure film are confirmed. Hardness of the WC-TiAlN heterostructure film is evaluated by nanoindentation test. The hardness of WC-TiAlN heterostructure film is increased from 30 to 46 GPa. At last growth mechanism of these films is presented to base on the previous results.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2005.02.043