Anisotropy in the wet-etching of semiconductors

The surface chemistry and electrochemistry of the anisotropic etching of semiconductors are reviewed. Recent insights into the anisotropic chemical etching of silicon in alkaline solution and of electrochemical etching of anisotropic pores in n-type semiconductors are described. The possible role of...

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Bibliographic Details
Published in:Current opinion in solid state & materials science 2005-02, Vol.9 (1), p.84-90
Main Authors: Kelly, John J., Philipsen, Harold G.G.
Format: Article
Language:English
Subjects:
Electrochemistry
Galvanic effects
III–V Semiconductors
Silicon
Wet-etching
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Summary:The surface chemistry and electrochemistry of the anisotropic etching of semiconductors are reviewed. Recent insights into the anisotropic chemical etching of silicon in alkaline solution and of electrochemical etching of anisotropic pores in n-type semiconductors are described. The possible role of galvanic effects in open-circuit etching is emphasized.
ISSN:1359-0286
DOI:10.1016/j.cossms.2006.04.003