Hetero-epitaxial growth of SiCGe on SiC

SiCGe/SiC heterojunction structure is required in development of SiC optoelectronic devices and light-activated switching devices. We present in this paper a primary attempt to grow the ternary alloy SiCGe on SiC substrates under varied growth conditions in a conventional hot-wall CVD system. SiH 4,...

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Bibliographic Details
Published in:Microelectronic engineering 2006, Vol.83 (1), p.170-175
Main Authors: Chen, Z.M., Pu, H.B., Wo, L.M., Lu, G., Li, L.B., Tan, C.X.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Compound structure devices
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Heterojunction
Integrated optoelectronics. Optoelectronic circuits
LPCVD
Optical and optoelectronic circuits
Optoelectronic devices
Optoelectronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SiC
SiCGe
Switching, multiplexing, switched capacity circuits
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Summary:SiCGe/SiC heterojunction structure is required in development of SiC optoelectronic devices and light-activated switching devices. We present in this paper a primary attempt to grow the ternary alloy SiCGe on SiC substrates under varied growth conditions in a conventional hot-wall CVD system. SiH 4, GeH 4 and C 3H 8 were employed as silicon, germanium and carbon sources, respectively. The samples were measured by means of SEM, XPS, XRD, optical absorption, etc. Two different growth modes i.e., island growth and porous growth were observed. It has been shown that germanium atoms can be effectively incorporated into the ternary alloys, which makes their optical gaps to be narrowed with increasing Ge content. However, incorporation of Ge induces a heavy lattice mismatch, which limits the film thickness by the formation of mismatch defects. It has been shown that use of a buffer layer can effectively improve the growth quality of the ternary alloy.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2005.10.053