High temperature electrical conductivity of epitaxial Gd-doped CeO2 thin films

Single-crystalline epitaxial Gd-doped CeO2 (GCO, Gd0.2Ce0.8O1.9) thin films were grown on (001) NdGaO3 (NGO) and LaAlO3 (LAO) substrates through pulsed-laser deposition. The electrical conductivity was investigated by AC impedance spectroscopy. The temperature dependence of the electrical conductivi...

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Bibliographic Details
Published in:Solid state ionics 2004-11, Vol.175 (1-4), p.103-106
Main Author: CHEN, L
Format: Article
Language:English
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Summary:Single-crystalline epitaxial Gd-doped CeO2 (GCO, Gd0.2Ce0.8O1.9) thin films were grown on (001) NdGaO3 (NGO) and LaAlO3 (LAO) substrates through pulsed-laser deposition. The electrical conductivity was investigated by AC impedance spectroscopy. The temperature dependence of the electrical conductivity gives an activation energy of 0.74 eV for GCO/NGO and a conductivity which is very close to that of the bulk polycrystalline material. For GCO films deposited on LAO, the conductivity of the substrate makes a significant contribution to the total measured conductivity.
ISSN:0167-2738
DOI:10.1016/j.ssi.2004.09.034