High-temperature ( T⩾400 K) operation of strain-compensated quantum cascade lasers with thin InAs insertion layers and AlAs blocking barriers

• Published in: Journal of crystal growth 2005-05, Vol.278 (1), p.714-717
• Main Authors: Yang, Q.K., Mann, Ch, Fuchs, F., Köhler, K., Bronner, W.
• Format: Article
• Language: English
• Subjects: A3. Molecular beam epitaxy; B3. Infrared devices; B3. Lasers; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Lasers; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Optics; Physics; Semiconductor lasers; laser diodes
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2005.01.001

Conventional strain-compensated quantum cascade (QC) lasers are fabricated with both tensile strained AlInAs and compressively strained GaInAs layers. We show that strain compensation can also be achieved using tensile strained AlInAs barrier layers and lattice-matched GaInAs with thin InAs layers inserted. In the present paper, we use Al 0.6In 0.4As as barriers. The tensile strain caused by these barriers is compensated by thin InAs layers inserted into the lattice-matched GaInAs wells. The lasers, mounted epilayer up with as-cleaved facets, operate in pulsed mode up to 400 K (127 °C) at a wavelength of λ ∼ 5.3 μ m . For a laser with a ridge size of 18 μm×3 mm, the maximum output peak power per facet obtained is 1 W at room temperature (27 °C).