Growth and characterization of GaN-based structures on SiCOI-engineered substrates

• Published in: Journal of crystal growth 2004-12, Vol.272 (1), p.500-505
• Main Authors: Dikme, Y., van Gemmern, P., Lin, Y.C., Szymakowski, A., Kalisch, H., Faure, B., Richtarch, C., Larhèche, H., Bove, P., Letertre, F., Woitok, J.F., Efthimiadis, K., Jansen, R.H., Heuken, M.
• Format: Article
• Language: English
• Subjects: A1. Characterization; A1. Interfaces; A3. Metalorganic vapor-phase epitaxy; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III–V materials; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Iii-v semiconductors; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2004.08.037

Silicon carbide (SiC) still shows the best properties as substrate for the growth of GaN and its alloys but suffers from a very high price. An innovative alternative for this substrate are SiC/SiO 2/Si (SiCOI) substrates, combining SiC and Si (silicon) substrate advantages thanks to the Smart Cut™ technology. These substrates consist of thin SiC layers (∼270 nm) bonded on (0 0 1) Si substrates. Using SiCOI substrates, up to 3 μm of GaN could be grown crack-free. The structures were investigated by atomic force microscopy (root mean square=0.86 nm), high-resolution X-ray diffraction and low-temperature (20 K) photoluminescence (PL) (FWHM (full-width at half-maximum)=4.9 meV). Electroluminescence test heterostructures consisting of InGaN/GaN multiple quantum wells (MQWs) were also deposited on SiCOI. Room temperature PL measurements resulted in a QW emission at around 440 nm with a FWHM of 7.8 nm. At electrical excitation, blue light emission was observed.