Selectively etched tunnel junction for lateral current and optical confinement in InP-based vertical cavity lasers

We demonstrate a thin, selectively lateral-etched, Alln(Ga)As tunnel junction (TJ) layer as a current and optical confinement aperture in the InP-based long-wavelength vertical cavity surface-emitting lasers (VCSELs). A high etch selectivity was demonstrated by etching the aperture a distance of sev...

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Bibliographic Details
Published in:Journal of electronic materials 2004-02, Vol.33 (2), p.118-122, Article 118
Main Authors: REDDY, M. H. M, ASANO, T, FEEZELL, D, BUELL, D. A, HUNTINGTON, A. S, KODA, R, COLDREN, L. A
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
Tunneling
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Summary:We demonstrate a thin, selectively lateral-etched, Alln(Ga)As tunnel junction (TJ) layer as a current and optical confinement aperture in the InP-based long-wavelength vertical cavity surface-emitting lasers (VCSELs). A high etch selectivity was demonstrated by etching the aperture a distance of several microns without affecting the surrounding InP etch-resistant layer. Edge-emitting lasers enclosing the TJ aperture showed high injection efficiency and low current spreading underneath the aperture. Single-mode continuous-wave operation of a 1.55-mum VCSEL was demonstrated successfully with a room-temperature differential efficiency of 21% using a 6-mm-wide TJ aperture.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-004-0280-x