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High-saturation-current InGaAs/InAlAs charge-compensated uni-traveling-carrier photodiode
Charge compensation is utilized to reduce space charge compression in a photodiode. Here we demonstrate an InGaAs/InAlAs uni‐traveling‐carrier photodiode with a charge compensated InAlAs depletion layer. A bandwidth of 20 GHz and saturation current of 45 mA are demonstrated. (© 2004 WILEY‐VCH Verlag...
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Published in: | Physica status solidi. A, Applied research Applied research, 2004-10, Vol.201 (13), p.3037-3041 |
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Main Authors: | , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that cite this one |
Online Access: | Get full text |
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Summary: | Charge compensation is utilized to reduce space charge compression in a photodiode. Here we demonstrate an InGaAs/InAlAs uni‐traveling‐carrier photodiode with a charge compensated InAlAs depletion layer. A bandwidth of 20 GHz and saturation current of 45 mA are demonstrated. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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ISSN: | 0031-8965 1521-396X |
DOI: | 10.1002/pssa.200406847 |