Electrical properties of individual and small ensembles of InAs/InP nanostructures

We investigate electrical properties of InAs/InP semiconductor nanostructures by conductive atomic force microscopy (C‐AFM) and current measurements at low temperatures in processed devices. Different conductances and threshold voltages for current onset were observed for each type of nanostructure....

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2006-05, Vol.203 (6), p.1353-1358
Main Authors: Vicaro, K. O., Gutiérrez, H. R., Bortoleto, J. R. R., Nieto, L., Zuben, A. A. G. von, Seabra, A. C., Schulz, P. A., Cotta, M. A.
Format: Article
Language:English
Subjects:
68.37.Ps
73.61.Ey
73.63.Kv
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in multilayers, nanoscale materials and structures
Exact sciences and technology
Physics
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Summary:We investigate electrical properties of InAs/InP semiconductor nanostructures by conductive atomic force microscopy (C‐AFM) and current measurements at low temperatures in processed devices. Different conductances and threshold voltages for current onset were observed for each type of nanostructure. In particular, the extremity of the wire could be compared to a dot with similar dimensions. The processed devices were used in order to access the in‐plane conductance of an assembly of a reduced number of nanostructures. Here, fluctuations on I –V curves at low temperatures (
ISSN:1862-6300
0031-8965
1862-6319
DOI:10.1002/pssa.200566109