Growth of dilute GaNSb by plasma-assisted MBE

Using plasma-assisted molecular beam epitaxy (MBE), GaN x Sb 1− x films have been grown onto GaSb and GaAs substrates over a range of growth temperatures (310–460 °C). The films showed excellent crystalline quality and a nitrogen incorporation of 0–1.75% measured by X-ray diffraction. These material...

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Bibliographic Details
Published in:Journal of crystal growth 2005-05, Vol.278 (1), p.188-192
Main Authors: Buckle, L., Bennett, B.R., Jollands, S., Veal, T.D., Wilson, N.R., Murdin, B.N., McConville, C.F., Ashley, T.
Format: Article
Language:English
Subjects:
A1. Doping
A1. X-ray diffraction
A3. Molecular beam epitaxy
B1. Antimonides
B2. Semiconducting gallium compounds
B2. Semiconducting III–V materials
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Using plasma-assisted molecular beam epitaxy (MBE), GaN x Sb 1− x films have been grown onto GaSb and GaAs substrates over a range of growth temperatures (310–460 °C). The films showed excellent crystalline quality and a nitrogen incorporation of 0–1.75% measured by X-ray diffraction. These materials should enable access to wavelengths in the 2–4 μm range.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2004.12.148