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Growth of dilute GaNSb by plasma-assisted MBE
Using plasma-assisted molecular beam epitaxy (MBE), GaN x Sb 1− x films have been grown onto GaSb and GaAs substrates over a range of growth temperatures (310–460 °C). The films showed excellent crystalline quality and a nitrogen incorporation of 0–1.75% measured by X-ray diffraction. These material...
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| Published in: | Journal of crystal growth 2005-05, Vol.278 (1), p.188-192 |
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| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c373t-85d2359520f4cb5774a00ba548a780ec79597f6db88b979f5c08257d4bd6186c3 |
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| cites | cdi_FETCH-LOGICAL-c373t-85d2359520f4cb5774a00ba548a780ec79597f6db88b979f5c08257d4bd6186c3 |
| container_end_page | 192 |
| container_issue | 1 |
| container_start_page | 188 |
| container_title | Journal of crystal growth |
| container_volume | 278 |
| creator | Buckle, L. Bennett, B.R. Jollands, S. Veal, T.D. Wilson, N.R. Murdin, B.N. McConville, C.F. Ashley, T. |
| description | Using plasma-assisted molecular beam epitaxy (MBE), GaN
x
Sb
1−
x
films have been grown onto GaSb and GaAs substrates over a range of growth temperatures (310–460
°C). The films showed excellent crystalline quality and a nitrogen incorporation of 0–1.75% measured by X-ray diffraction. These materials should enable access to wavelengths in the 2–4
μm range. |
| doi_str_mv | 10.1016/j.jcrysgro.2004.12.148 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29316551</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024804021372</els_id><sourcerecordid>29316551</sourcerecordid><originalsourceid>FETCH-LOGICAL-c373t-85d2359520f4cb5774a00ba548a780ec79597f6db88b979f5c08257d4bd6186c3</originalsourceid><addsrcrecordid>eNqFkLFOwzAQhi0EEqXwCigLbAlnx46dDahKQSowALPlOA44SpviS0F9e1y1iJHlbvn--3UfIecUMgq0uGqz1oYNvoc-YwA8oyyjXB2QEVUyTwUAOySjOFkKjKtjcoLYAsQkhRFJZ6H_Hj6Svklq360Hl8zM00uVVJtk1RlcmNQgehxcnTzeTk_JUWM6dGf7PSZvd9PXyX06f549TG7mqc1lPqRK1CwXpWDQcFsJKbkBqIzgykgFzspSlLIp6kqpqpRlIywoJmTNq7qgqrD5mFzu7q5C_7l2OOiFR-u6zixdv0bNypwWQtAIFjvQhh4xuEavgl-YsNEU9NaObvWvHb21oynT0U4MXuwbDFrTNcEsrce_dCG5injkrneci-9-eRc0Wu-W1tU-ODvouvf_Vf0A8Ql8Bg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29316551</pqid></control><display><type>article</type><title>Growth of dilute GaNSb by plasma-assisted MBE</title><source>ScienceDirect Freedom Collection</source><creator>Buckle, L. ; Bennett, B.R. ; Jollands, S. ; Veal, T.D. ; Wilson, N.R. ; Murdin, B.N. ; McConville, C.F. ; Ashley, T.</creator><creatorcontrib>Buckle, L. ; Bennett, B.R. ; Jollands, S. ; Veal, T.D. ; Wilson, N.R. ; Murdin, B.N. ; McConville, C.F. ; Ashley, T.</creatorcontrib><description>Using plasma-assisted molecular beam epitaxy (MBE), GaN
x
Sb
1−
x
films have been grown onto GaSb and GaAs substrates over a range of growth temperatures (310–460
°C). The films showed excellent crystalline quality and a nitrogen incorporation of 0–1.75% measured by X-ray diffraction. These materials should enable access to wavelengths in the 2–4
μm range.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2004.12.148</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Doping ; A1. X-ray diffraction ; A3. Molecular beam epitaxy ; B1. Antimonides ; B2. Semiconducting gallium compounds ; B2. Semiconducting III–V materials ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Molecular, atomic, ion, and chemical beam epitaxy ; Physics ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Journal of crystal growth, 2005-05, Vol.278 (1), p.188-192</ispartof><rights>2005 Elsevier B.V.</rights><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-85d2359520f4cb5774a00ba548a780ec79597f6db88b979f5c08257d4bd6186c3</citedby><cites>FETCH-LOGICAL-c373t-85d2359520f4cb5774a00ba548a780ec79597f6db88b979f5c08257d4bd6186c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,23930,23931,25140,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16748004$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Buckle, L.</creatorcontrib><creatorcontrib>Bennett, B.R.</creatorcontrib><creatorcontrib>Jollands, S.</creatorcontrib><creatorcontrib>Veal, T.D.</creatorcontrib><creatorcontrib>Wilson, N.R.</creatorcontrib><creatorcontrib>Murdin, B.N.</creatorcontrib><creatorcontrib>McConville, C.F.</creatorcontrib><creatorcontrib>Ashley, T.</creatorcontrib><title>Growth of dilute GaNSb by plasma-assisted MBE</title><title>Journal of crystal growth</title><description>Using plasma-assisted molecular beam epitaxy (MBE), GaN
x
Sb
1−
x
films have been grown onto GaSb and GaAs substrates over a range of growth temperatures (310–460
°C). The films showed excellent crystalline quality and a nitrogen incorporation of 0–1.75% measured by X-ray diffraction. These materials should enable access to wavelengths in the 2–4
μm range.</description><subject>A1. Doping</subject><subject>A1. X-ray diffraction</subject><subject>A3. Molecular beam epitaxy</subject><subject>B1. Antimonides</subject><subject>B2. Semiconducting gallium compounds</subject><subject>B2. Semiconducting III–V materials</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Molecular, atomic, ion, and chemical beam epitaxy</subject><subject>Physics</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqFkLFOwzAQhi0EEqXwCigLbAlnx46dDahKQSowALPlOA44SpviS0F9e1y1iJHlbvn--3UfIecUMgq0uGqz1oYNvoc-YwA8oyyjXB2QEVUyTwUAOySjOFkKjKtjcoLYAsQkhRFJZ6H_Hj6Svklq360Hl8zM00uVVJtk1RlcmNQgehxcnTzeTk_JUWM6dGf7PSZvd9PXyX06f549TG7mqc1lPqRK1CwXpWDQcFsJKbkBqIzgykgFzspSlLIp6kqpqpRlIywoJmTNq7qgqrD5mFzu7q5C_7l2OOiFR-u6zixdv0bNypwWQtAIFjvQhh4xuEavgl-YsNEU9NaObvWvHb21oynT0U4MXuwbDFrTNcEsrce_dCG5injkrneci-9-eRc0Wu-W1tU-ODvouvf_Vf0A8Ql8Bg</recordid><startdate>20050501</startdate><enddate>20050501</enddate><creator>Buckle, L.</creator><creator>Bennett, B.R.</creator><creator>Jollands, S.</creator><creator>Veal, T.D.</creator><creator>Wilson, N.R.</creator><creator>Murdin, B.N.</creator><creator>McConville, C.F.</creator><creator>Ashley, T.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20050501</creationdate><title>Growth of dilute GaNSb by plasma-assisted MBE</title><author>Buckle, L. ; Bennett, B.R. ; Jollands, S. ; Veal, T.D. ; Wilson, N.R. ; Murdin, B.N. ; McConville, C.F. ; Ashley, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-85d2359520f4cb5774a00ba548a780ec79597f6db88b979f5c08257d4bd6186c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>A1. Doping</topic><topic>A1. X-ray diffraction</topic><topic>A3. Molecular beam epitaxy</topic><topic>B1. Antimonides</topic><topic>B2. Semiconducting gallium compounds</topic><topic>B2. Semiconducting III–V materials</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Molecular, atomic, ion, and chemical beam epitaxy</topic><topic>Physics</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Buckle, L.</creatorcontrib><creatorcontrib>Bennett, B.R.</creatorcontrib><creatorcontrib>Jollands, S.</creatorcontrib><creatorcontrib>Veal, T.D.</creatorcontrib><creatorcontrib>Wilson, N.R.</creatorcontrib><creatorcontrib>Murdin, B.N.</creatorcontrib><creatorcontrib>McConville, C.F.</creatorcontrib><creatorcontrib>Ashley, T.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Buckle, L.</au><au>Bennett, B.R.</au><au>Jollands, S.</au><au>Veal, T.D.</au><au>Wilson, N.R.</au><au>Murdin, B.N.</au><au>McConville, C.F.</au><au>Ashley, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of dilute GaNSb by plasma-assisted MBE</atitle><jtitle>Journal of crystal growth</jtitle><date>2005-05-01</date><risdate>2005</risdate><volume>278</volume><issue>1</issue><spage>188</spage><epage>192</epage><pages>188-192</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>Using plasma-assisted molecular beam epitaxy (MBE), GaN
x
Sb
1−
x
films have been grown onto GaSb and GaAs substrates over a range of growth temperatures (310–460
°C). The films showed excellent crystalline quality and a nitrogen incorporation of 0–1.75% measured by X-ray diffraction. These materials should enable access to wavelengths in the 2–4
μm range.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2004.12.148</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 2005-05, Vol.278 (1), p.188-192 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_29316551 |
| source | ScienceDirect Freedom Collection |
| subjects | A1. Doping A1. X-ray diffraction A3. Molecular beam epitaxy B1. Antimonides B2. Semiconducting gallium compounds B2. Semiconducting III–V materials Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Growth of dilute GaNSb by plasma-assisted MBE |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T06%3A17%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20of%20dilute%20GaNSb%20by%20plasma-assisted%20MBE&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Buckle,%20L.&rft.date=2005-05-01&rft.volume=278&rft.issue=1&rft.spage=188&rft.epage=192&rft.pages=188-192&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/j.jcrysgro.2004.12.148&rft_dat=%3Cproquest_cross%3E29316551%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c373t-85d2359520f4cb5774a00ba548a780ec79597f6db88b979f5c08257d4bd6186c3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=29316551&rft_id=info:pmid/&rfr_iscdi=true |