Li-doping effects on the electrical properties of ZnO films prepared by the chemical-bath deposition method

• Published in: Physica. B, Condensed matter Condensed matter, 2005-12, Vol.370 (1), p.158-167
• Main Authors: Mohamed, Galal A., Abd El-Moiz, A.B., Rashad, M.
• Format: Article
• Language: English
• Subjects: Chemical bath deposition; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Dielectric properties; Dielectric thin films; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electrical properties and measurements; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Other inorganic semiconductors; Physics; Zink oxide films
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2005.09.006

Zn 1− x Li x O thin films, with x varying from 0.0 to 0.5, successfully have been deposited on glass substrates using the chemical bath deposition (CBD) technique. J– E characteristics, DC conductivity and dielectric measurements have been carried out. These measurements were done as a function of temperature, Li concentration and applied electric field intensity. The J– E characteristics are explained in terms of the Pool–Frenkel and Schottky effects. The J– E relation and DC conductivity are strongly dependent on both the Li concentration and applied electric field intensity. Dielectric hysteresis was observed between heating and cooling runs which revealed that the dielectric constant often increases slowly in the low-temperature region, then increases faster above the phase transition.